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JAN2N2218A

Microsemi Corporation JAN2N2218A

Part Number:
JAN2N2218A
Manufacturer:
Microsemi Corporation
Ventron No:
3069143-JAN2N2218A
Description:
TRANS NPN 50V 0.8A TO39
ECAD Model:
Datasheet:
JAN2N2218A

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Specifications
Microsemi Corporation JAN2N2218A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N2218A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/251
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Reference Standard
    MIL-19500/251
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    800mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Current - Collector (Ic) (Max)
    800mA
  • Collector Base Voltage (VCBO)
    75V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N2218A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.

JAN2N2218A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA


JAN2N2218A Applications
There are a lot of Microsemi Corporation
JAN2N2218A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N2218A More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag
Small-Signal BJT _ TO-39
TRANS NPN 50V 0.8A TO39
JAN2N2218A --
Product Comparison
The three parts on the right have similar specifications to JAN2N2218A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    Reference Standard
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Current - Collector (Ic) (Max)
    Collector Base Voltage (VCBO)
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Published
    Subcategory
    Power Dissipation
    Emitter Base Voltage (VEBO)
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power - Max
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    View Compare
  • JAN2N2218A
    JAN2N2218A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -55°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/251
    e0
    no
    Discontinued
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    8541.21.00.95
    800mW
    BOTTOM
    WIRE
    2
    MIL-19500/251
    Qualified
    1
    SINGLE
    COLLECTOR
    SWITCHING
    NPN
    NPN
    50V
    800mA
    40 @ 150mA 10V
    10nA
    1V @ 50mA, 500mA
    800mA
    75V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N3506A
    JAN2N3506A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    Through Hole
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/349
    e0
    -
    Active
    1 (Unlimited)
    3
    EAR99
    TIN LEAD
    -
    1W
    BOTTOM
    WIRE
    3
    -
    Qualified
    1
    SINGLE
    COLLECTOR
    SWITCHING
    NPN
    NPN
    40V
    3A
    40 @ 1.5A 2V
    -
    1.5V @ 250mA, 2.5A
    -
    60V
    No
    Non-RoHS Compliant
    22 Weeks
    2007
    Other Transistors
    1W
    5V
    90ns
    45ns
    -
    -
    -
    -
    -
    -
    JAN2N2218A vs JAN2N3506A
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    1A
    140V
    No
    Non-RoHS Compliant
    23 Weeks
    2007
    -
    -
    -
    -
    -
    TO-46-3
    200°C
    -65°C
    500mW
    80V
    80V
    JAN2N2218A vs JAN2N3057A
  • JAN2N2222AUA
    JAN2N2222AUA
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    Surface Mount
    Surface Mount
    4-SMD
    4
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    1V
    800mA
    100 @ 150mA 10V
    50nA
    1V @ 50mA, 500mA
    800mA
    75V
    No
    Non-RoHS Compliant
    23 Weeks
    2007
    -
    -
    -
    -
    -
    -
    200°C
    -65°C
    500mW
    50V
    50V
    JAN2N2218A vs JAN2N2222AUA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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