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JAN2N1893

Microsemi Corporation JAN2N1893

Part Number:
JAN2N1893
Manufacturer:
Microsemi Corporation
Ventron No:
2463760-JAN2N1893
Description:
TRANS NPN 80V 0.5A TO-5
ECAD Model:
Datasheet:
JAN2N1893

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Specifications
Microsemi Corporation JAN2N1893 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N1893.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    22 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/182
  • Published
    2002
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Case Connection
    COLLECTOR
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 15mA, 150mA
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N1893 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 15mA, 150mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 500mA volts at its maximum.

JAN2N1893 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V


JAN2N1893 Applications
There are a lot of Microsemi Corporation
JAN2N1893 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JAN2N1893 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 80V 0.5A 800mW 3-Pin TO-5 Bag
Power Bjt To-5 Rohs Compliant: Yes |Microchip JAN2N1893
Product Comparison
The three parts on the right have similar specifications to JAN2N1893.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Surface Mount
    HTS Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Power Dissipation-Max (Abs)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Collector Emitter Breakdown Voltage
    View Compare
  • JAN2N1893
    JAN2N1893
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    22 Weeks
    Through Hole
    Through Hole
    TO-205AA, TO-5-3 Metal Can
    3
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/182
    2002
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    800mW
    BOTTOM
    WIRE
    2
    Qualified
    1
    SINGLE
    800mW
    COLLECTOR
    NPN
    NPN
    80V
    500mA
    40 @ 150mA 10V
    10μA ICBO
    5V @ 15mA, 150mA
    120V
    7V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • JAN2N4237
    JAN2N4237
    Microsemi Corporation
    -
    22 Weeks
    -
    Through Hole
    TO-205AD, TO-39-3 Metal Can
    -
    SILICON
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/581
    2002
    e0
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    -
    BOTTOM
    WIRE
    -
    Qualified
    1
    SINGLE
    -
    -
    NPN
    NPN
    -
    -
    30 @ 250mA 1V
    100nA ICBO
    600mV @ 100mA, 1A
    -
    -
    -
    Non-RoHS Compliant
    NO
    8541.29.00.95
    Other Transistors
    NOT SPECIFIED
    NOT SPECIFIED
    MIL-19500/581
    O-MBCY-W3
    1W
    40V
    1A
    1MHz
    0.8W
    -
    -
    -
    -
    JAN2N1893 vs JAN2N4237
  • JAN2N3057A
    JAN2N3057A
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 1 month ago)
    23 Weeks
    Through Hole
    Through Hole
    TO-206AB, TO-46-3 Metal Can
    3
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/391
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    500mV
    1A
    50 @ 500mA 10V
    10nA
    500mV @ 50mA, 500mA
    140V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    500mW
    80V
    1A
    -
    -
    TO-46-3
    200°C
    -65°C
    80V
    JAN2N1893 vs JAN2N3057A
  • JAN2N2222AUA
    JAN2N2222AUA
    Microsemi Corporation
    IN PRODUCTION (Last Updated: 3 weeks ago)
    23 Weeks
    Surface Mount
    Surface Mount
    4-SMD
    4
    -
    -65°C~200°C TJ
    Bulk
    Military, MIL-PRF-19500/255
    2007
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    500mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NPN
    1V
    800mA
    100 @ 150mA 10V
    50nA
    1V @ 50mA, 500mA
    75V
    -
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    500mW
    50V
    800mA
    -
    -
    -
    200°C
    -65°C
    50V
    JAN2N1893 vs JAN2N2222AUA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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