part#IXTM6N80, Manufacturer:IXYS Corporation is available at ventronchip.com, see description of IXTM6N80 as below .use the request quote form to request IXTM6N80 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for IXTM6N80 depending on the quantity required, availability and warehouse location.
The three parts on the right have similar specifications to IXTM6N80.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusFactory Lead TimePublishedPbfree CodePower DissipationDrain-source On Resistance-MaxRadiation HardeningSurface MountSeriesView Compare
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IXTM6N80-------------------------------------------------
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Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A1000VROHS3 Compliant--------
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Through HoleThrough HoleTO-204AA, TO-33SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEG--2O-MBFM-P2-1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20V5A20A-ROHS3 Compliant35 Weeks2000yes180W2OhmNo--
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-Through HoleTO-204AA, TO-3-SILICON-55°C~150°C TJTubeObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED-O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING950m Ω @ 5.5A, 10V4.5V @ 250μA4500pF @ 25V11A Tc170nC @ 10V800V10V±20V--11A44A800VROHS3 Compliant-2012yes-0.95Ohm-NOGigaMOS™
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