IXYS IXTM67N10 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM67N10.
- Mounting TypeThrough Hole
- Package / CaseTO-204AE
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGigaMOS™
- Published2003
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 33.5A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C67A Tc
- Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)67A
- Drain-source On Resistance-Max0.025Ohm
- Pulsed Drain Current-Max (IDM)268A
- DS Breakdown Voltage-Min100V
- RoHS StatusROHS3 Compliant
IXTM67N10 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)
IXTM67N10 Applications
There are a lot of IXYS
IXTM67N10 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)
IXTM67N10 Applications
There are a lot of IXYS
IXTM67N10 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IXTM67N10 More Descriptions
Trans MOSFET N-CH 100V 67A 3-Pin(2 Tab) TO-204AE
Power Field-Effect Transistor, 67A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
IXYS Power Transistor Module
POWER MOSFET TO-3
Power Field-Effect Transistor, 67A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
IXYS Power Transistor Module
POWER MOSFET TO-3
The three parts on the right have similar specifications to IXTM67N10.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusMountContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Factory Lead TimePower DissipationRadiation HardeningView Compare
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IXTM67N10Through HoleTO-204AENO3SILICON-55°C~150°C TJTubeGigaMOS™2003yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING25m Ω @ 33.5A, 10V4V @ 4mA4500pF @ 25V67A Tc260nC @ 10V100V10V±20V67A0.025Ohm268A100VROHS3 Compliant------- -
Through HoleTO-204AA, TO-3-3SILICON-55°C~150°C TJTube---Obsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A-20A1000VROHS3 CompliantThrough Hole5A20V---
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Through HoleTO-204AA, TO-3-3SILICON-55°C~150°C TJTube-2000yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEG--2O-MBFM-P2-1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A2Ohm20A-ROHS3 CompliantThrough Hole5A20V35 Weeks180WNo
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Through HoleTO-204AA, TO-3NO-SILICON-55°C~150°C TJTubeGigaMOS™2012yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED-O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING950m Ω @ 5.5A, 10V4.5V @ 250μA4500pF @ 25V11A Tc170nC @ 10V800V10V±20V11A0.95Ohm44A800VROHS3 Compliant------
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