IXYS IXTM12N100
- Part Number:
- IXTM12N100
- Manufacturer:
- IXYS
- Ventron No:
- 5524252-IXTM12N100
- Description:
- MegaMOS FET
- ECAD Model:
-
- Datasheet:
- IXTM12N100
IXYS IXTM12N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTM12N100.
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGigaMOS™
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.05 Ω @ 6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Drain to Source Voltage (Vdss)1000V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)12A
- Pulsed Drain Current-Max (IDM)48A
- DS Breakdown Voltage-Min1000V
- RoHS StatusROHS3 Compliant
IXTM12N100 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTM12N100 Features
based on its rated peak drain current 48A.
a 1000V drain to source voltage (Vdss)
IXTM12N100 Applications
There are a lot of IXYS
IXTM12N100 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTM12N100 Features
based on its rated peak drain current 48A.
a 1000V drain to source voltage (Vdss)
IXTM12N100 Applications
There are a lot of IXYS
IXTM12N100 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXTM12N100 More Descriptions
IXYS Power Transistor Module
POWER MOSFET TO-3
POWER MOSFET TO-3
The three parts on the right have similar specifications to IXTM12N100.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusMountNumber of PinsContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Factory Lead TimePublishedPower DissipationDrain-source On Resistance-MaxRadiation HardeningView Compare
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IXTM12N100Through HoleTO-204AA, TO-3NOSILICON-55°C~150°C TJTubeGigaMOS™yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING1.05 Ω @ 6A, 10V4.5V @ 250μA4000pF @ 25V12A Tc170nC @ 10V1000V10V±20V12A48A1000VROHS3 Compliant---------- -
Through HoleTO-204AA, TO-3-SILICON-55°C~150°C TJTube--Obsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED2O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.4 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20A1000VROHS3 CompliantThrough Hole35A20V-----
-
Through HoleTO-204AA, TO-3-SILICON-55°C~150°C TJTube-yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEG--2O-MBFM-P2-1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2 Ω @ 2.5A, 10V4.5V @ 250μA2600pF @ 25V5A Tc130nC @ 10V1000V10V±20V5A20A-ROHS3 CompliantThrough Hole35A20V35 Weeks2000180W2OhmNo
-
Through HoleTO-204AA, TO-3NOSILICON-55°C~150°C TJTubeGigaMOS™yesObsolete1 (Unlimited)2FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMPIN/PEGNOT SPECIFIEDNOT SPECIFIED-O-MBFM-P2Not Qualified1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING950m Ω @ 5.5A, 10V4.5V @ 250μA4500pF @ 25V11A Tc170nC @ 10V800V10V±20V11A44A800VROHS3 Compliant-----2012-0.95Ohm-
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