ISSI, Integrated Silicon Solution Inc IS43R86400D-6TLI
- Part Number:
- IS43R86400D-6TLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3235035-IS43R86400D-6TLI
- Description:
- IC SDRAM 512MBIT 167MHZ 66TSOP
- ECAD Model:
-
- Datasheet:
- IS43/46R(86400D,16320D,32160D)
ISSI, Integrated Silicon Solution Inc IS43R86400D-6TLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43R86400D-6TLI.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Number of Pins66
- Operating Temperature-40°C~85°C TA
- PackagingTray
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations66
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count66
- Qualification StatusNot Qualified
- Operating Supply Voltage2.5V
- Supply Voltage-Max (Vsup)2.7V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size512Mb 64M x 8
- Number of Ports1
- Nominal Supply Current370mA
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Organization64MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Address Bus Width15b
- Density512 Mb
- Standby Current-Max0.025A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length22.22mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IS43R86400D-6TLI Overview
Contact plating is an important aspect of electronic devices, ensuring reliable connections between components. In this case, the contact plating used is tin with a lead-free code of yes. This is in accordance with the HTS Code of 8542.32.00.28, which specifies the classification of integrated circuits. The terminal position of the device is dual, meaning there are two terminals for connection. The memory format is DRAM, which stands for Dynamic Random Access Memory, and has a data bus width of 8b, allowing for efficient transfer of data. The organization of the memory is 64MX8, meaning it has a capacity of 64 megabits with 8 bits per cell. Additionally, the device has an interleaved burst length of 248, allowing for fast data transfer. The maximum height of the device when seated is 1.2mm, ensuring a compact and space-saving design. Furthermore, this device is compliant with the RoHS3 regulations, ensuring it is environmentally friendly.
IS43R86400D-6TLI Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43R86400D-6TLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43R86400D-6TLI Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
Contact plating is an important aspect of electronic devices, ensuring reliable connections between components. In this case, the contact plating used is tin with a lead-free code of yes. This is in accordance with the HTS Code of 8542.32.00.28, which specifies the classification of integrated circuits. The terminal position of the device is dual, meaning there are two terminals for connection. The memory format is DRAM, which stands for Dynamic Random Access Memory, and has a data bus width of 8b, allowing for efficient transfer of data. The organization of the memory is 64MX8, meaning it has a capacity of 64 megabits with 8 bits per cell. Additionally, the device has an interleaved burst length of 248, allowing for fast data transfer. The maximum height of the device when seated is 1.2mm, ensuring a compact and space-saving design. Furthermore, this device is compliant with the RoHS3 regulations, ensuring it is environmentally friendly.
IS43R86400D-6TLI Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43R86400D-6TLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43R86400D-6TLI Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
IS43R86400D-6TLI More Descriptions
DRAM Chip DDR SDRAM 512Mbit 64M X 8 2.5V 66-Pin TSOP-II Tray
EAR99 Surface Mount Tray 64MX8 ic memory 166MHz 700ps 22.22mm 370mA
DDR SDRAM, 64Mx8, 2.5V, 8K, TSOP2-66,RoHSISSI SCT
IC DRAM 512M PARALLEL 66TSOP II
IC SDRAM 512MBIT 167MHZ 66TSOP
DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
512M, 2.5V, Ddr, 64Mx8, 166Mhz, 66 Pin Tsop Ii (400 Mil) Rohs, It |Integrated Silicon Solution (Issi) IS43R86400D-6TLI
IC DRAM DDR 512M 64MX8 6NS TSO
EAR99 Surface Mount Tray 64MX8 ic memory 166MHz 700ps 22.22mm 370mA
DDR SDRAM, 64Mx8, 2.5V, 8K, TSOP2-66,RoHSISSI SCT
IC DRAM 512M PARALLEL 66TSOP II
IC SDRAM 512MBIT 167MHZ 66TSOP
DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM
512M, 2.5V, Ddr, 64Mx8, 166Mhz, 66 Pin Tsop Ii (400 Mil) Rohs, It |Integrated Silicon Solution (Issi) IS43R86400D-6TLI
IC DRAM DDR 512M 64MX8 6NS TSO
The three parts on the right have similar specifications to IS43R86400D-6TLI.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusLead FreeSurface MountPower SuppliesSupply Current-MaxMemory DensityWidthView Compare
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IS43R86400D-6TLI8 WeeksTinSurface MountSurface Mount66-TSSOP (0.400, 10.16mm Width)66-40°C~85°C TATraye3yesActive3 (168 Hours)66EAR99AUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.3V~2.7VDUAL26012.5V0.65mm4066Not Qualified2.5V2.7V2.3V512Mb 64M x 81370mAVolatileSYNCHRONOUS166MHz700psDRAMParallel8b64MX83-STATE815ns15b512 Mb0.025ACOMMON81922482481.2mm22.22mmROHS3 CompliantLead Free------ -
--Surface MountSurface Mount60-TFBGA600°C~70°C TATray--Obsolete3 (168 Hours)60EAR99AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm-60Not Qualified1.8V1.95V1.7V256Mb 16M x 16180mAVolatileSYNCHRONOUS166MHz5.5nsDRAMParallel16b16MX163-STATE1615ns15b256 Mb0.00001ACOMMON819224816248161.1mm10mmRoHS Compliant------
-
---Surface Mount84-TFBGA840°C~70°C TATape & Reel (TR)--Obsolete3 (168 Hours)84-AUTO/SELF REFRESH-SDRAM - DDR21.7V~1.9VBOTTOM-11.8V0.8mm--Not Qualified-1.9V1.7V256Mb 16M x 161-VolatileSYNCHRONOUS333MHz450psDRAMParallel16b16MX163-STATE1615ns--0.005ACOMMON819248481.2mm12.5mmRoHS Compliant-YES1.8V0.33mA--
-
14 Weeks--Surface Mount90-LFBGA900°C~70°C TATray--Active3 (168 Hours)90-AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--Not Qualified-1.95V1.7V64Mb 2M x 321-VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel-32MX323-STATE3215ns--0.00002ACOMMON819224816248161.45mm13mmROHS3 Compliant-YES1.8V0.22mA1073741824 bit8mm
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