ISSI, Integrated Silicon Solution Inc IS43R16800E-5TLI-TR
- Part Number:
- IS43R16800E-5TLI-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3231942-IS43R16800E-5TLI-TR
- Description:
- IC SDRAM 128MBIT 200MHZ 66TSOP
- Datasheet:
- IS43R16800E-5TLI-TR
ISSI, Integrated Silicon Solution Inc IS43R16800E-5TLI-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43R16800E-5TLI-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Surface MountYES
- Number of Pins66
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations66
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionDUAL
- Supply Voltage2.5V
- Terminal Pitch0.635mm
- Qualification StatusNot Qualified
- Power Supplies2.5V
- Memory Size128Mb 8M x 16
- Memory TypeVolatile
- Clock Frequency200MHz
- Supply Current-Max0.24mA
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization8MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.003A
- Memory Density134217728 bit
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length248
- Interleaved Burst Length248
- RoHS StatusROHS3 Compliant
IS43R16800E-5TLI-TR Overview
The mounting type for this device is surface mount, which allows for easy installation on a variety of surfaces. With a total of 66 pins, this device offers a wide range of connectivity options. It operates efficiently in a temperature range of -40°C to 85°C, making it suitable for use in various environments. The voltage supply for this device ranges from 2.3V to 2.7V, ensuring stable and reliable performance. With a clock frequency of 200MHz, this device is capable of handling high-speed data processing. The maximum supply current is 0.24mA, ensuring low power consumption. The data bus width is 16b, providing ample space for data transfer. The organization of this device is 8MX16, allowing for efficient data storage and retrieval. Even in standby mode, the maximum current consumption is only 0.003A. The interleaved burst length of 248 ensures efficient data transfer and processing.
IS43R16800E-5TLI-TR Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
I/O Type: COMMON
IS43R16800E-5TLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43R16800E-5TLI-TR Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
The mounting type for this device is surface mount, which allows for easy installation on a variety of surfaces. With a total of 66 pins, this device offers a wide range of connectivity options. It operates efficiently in a temperature range of -40°C to 85°C, making it suitable for use in various environments. The voltage supply for this device ranges from 2.3V to 2.7V, ensuring stable and reliable performance. With a clock frequency of 200MHz, this device is capable of handling high-speed data processing. The maximum supply current is 0.24mA, ensuring low power consumption. The data bus width is 16b, providing ample space for data transfer. The organization of this device is 8MX16, allowing for efficient data storage and retrieval. Even in standby mode, the maximum current consumption is only 0.003A. The interleaved burst length of 248 ensures efficient data transfer and processing.
IS43R16800E-5TLI-TR Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
I/O Type: COMMON
IS43R16800E-5TLI-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43R16800E-5TLI-TR Memory applications.
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
IS43R16800E-5TLI-TR More Descriptions
DRAM Chip DDR SDRAM 128M-Bit 8M x 16 2.5V 66-Pin TSOP-II T/R
Active 3-STATE DUAL Volatile ic memory -40C~85C TA 2.5V 16b 0.003A
DDR SDRAM, 8Mx16, 2.5V, 4K, TSOP2-66,RoHSISSI SCT
IC DRAM 128M PARALLEL 66TSOP II
DRAM 128M (8Mx16) 200MHz DDR 2.5v
Active 3-STATE DUAL Volatile ic memory -40C~85C TA 2.5V 16b 0.003A
DDR SDRAM, 8Mx16, 2.5V, 4K, TSOP2-66,RoHSISSI SCT
IC DRAM 128M PARALLEL 66TSOP II
DRAM 128M (8Mx16) 200MHz DDR 2.5v
The three parts on the right have similar specifications to IS43R16800E-5TLI-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyVoltage - SupplyTerminal PositionSupply VoltageTerminal PitchQualification StatusPower SuppliesMemory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthRoHS StatusECCN CodeAdditional FeaturePeak Reflow Temperature (Cel)Number of FunctionsTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Number of PortsOperating ModeLengthHeight Seated (Max)WidthView Compare
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IS43R16800E-5TLI-TR8 WeeksSurface Mount66-TSSOP (0.400, 10.16mm Width)YES66-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)66SDRAM - DDR2.3V~2.7VDUAL2.5V0.635mmNot Qualified2.5V128Mb 8M x 16Volatile200MHz0.24mA700psDRAMParallel16b8MX163-STATE1615ns0.003A134217728 bitCOMMON4096248248ROHS3 Compliant--------------
-
8 WeeksSurface Mount60-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)-SDRAM - DDR21.7V~1.9V-----2Gb 256M x 8Volatile400MHz-400psDRAMParallel----15ns------ROHS3 Compliant-------------
-
8 WeeksSurface Mount84-TFBGA---40°C~85°C TATape & Reel (TR)Active3 (168 Hours)-SDRAM - DDR21.7V~1.9V-----2Gb 128M x 16Volatile400MHz-400nsDRAMParallel----15ns------ROHS3 Compliant-------------
-
8 WeeksSurface Mount60-TFBGAYES--40°C~85°C TATrayActive3 (168 Hours)60SDRAM - DDR2.3V~2.7VBOTTOM2.5V1mm--512Mb 32M x 16Volatile166MHz-700psDRAMParallel-32MX16-1615ns-536870912 bit----ROHS3 CompliantEAR99PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHNOT SPECIFIED1NOT SPECIFIEDR-PBGA-B602.7V2.3V1SYNCHRONOUS13mm1.2mm8mm
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