Infineon Technologies IRF7380TRPBF
- Part Number:
- IRF7380TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3069638-IRF7380TRPBF
- Description:
- MOSFET 2N-CH 80V 3.6A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7380TRPBF
Infineon Technologies IRF7380TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7380TRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance73MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC80V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3.6A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRF7380PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time9 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs73m Ω @ 2.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Rise Time10ns
- Fall Time (Typ)17 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage80V
- Avalanche Energy Rating (Eas)75 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs4 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7380TRPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7380TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7380TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7380TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7380TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7380TRPBF More Descriptions
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N-CH , 80V, 3.6A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.061ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL N-CH , 80V, 3.6A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.061ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
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