Infineon Technologies IRF7304PBF
- Part Number:
- IRF7304PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2847576-IRF7304PBF
- Description:
- MOSFET 2P-CH 20V 4.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7304PBF
Infineon Technologies IRF7304PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7304PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryOther Transistors
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIRF7304PBF
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max2W
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs90m Ω @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.3A
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)4.3A
- Drain-source On Resistance-Max0.09Ohm
- Pulsed Drain Current-Max (IDM)17A
- DS Breakdown Voltage-Min20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1.4W
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
IRF7304PBF Description
The IRF7304PBF is a Dual P-Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7304PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7304PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
The IRF7304PBF is a Dual P-Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7304PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7304PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
IRF7304PBF More Descriptions
Transistor MOSFET P Channel 20 Volt 4.3 Amp 8 Pin SOIC Tape and Reel
Dual P-Channel 20 V 0.09 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:17A; Row Pitch:6.3mm; SMD Marking:IRF7304PBF; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
Dual P-Channel 20 V 0.09 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:17A; Row Pitch:6.3mm; SMD Marking:IRF7304PBF; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
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