Infineon Technologies IRF7304

Name: IRF7304
Brand: Infineon Technologies
SKU: 2473742-IRF7304
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7304

Manufacturer:: Infineon Technologies

Ventron No:: 2473742-IRF7304

Description:: MOSFET 2P-CH 20V 4.3A 8-SOIC

ECAD Model:

Datasheet:: IRF7304

Part Pictures

Specifications

Infineon Technologies IRF7304 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7304.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1997
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.29.00.95
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power - Max
2W
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
610pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4.3A
Gate Charge (Qg) (Max) @ Vgs
22nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drain Current-Max (Abs) (ID)
3.6A
Drain-source On Resistance-Max
0.09Ohm
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
RoHS Status
Non-RoHS Compliant

Description

IRF7304 Description The fifth generation HEXFET of International Rectifier Company uses advanced technology to achieve minimum on-resistance, combines the well-known fast switching speed and rugged device design of HEXFET power MOSFET, and provides designers with an extremely efficient device used in a variety of applications. The SO-8 has been improved by customizing lead frames to enhance thermal properties and a variety of capabilities to handle a variety of power applications. With these improvements, multiple devices can be used in one application while reducing circuit board space. The package is designed for vapor phase infrared. Or wave soldering technology in typical printed circuit board placement applications, power consumption of more than 0.8W is possible. IRF7304 Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape&Reel Dynamic dv/dt Rating Fast Switching IRF7304 Applications
provides designers with an extremely efficient device used in a variety of applications.

IRF7304 More Descriptions

Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET 2P-CH 20V 4.3A 8-SOIC