Rohm Semiconductor IMT17T110
- Part Number:
- IMT17T110
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3068319-IMT17T110
- Description:
- TRANS 2PNP 50V 0.5A 6SMT
- ECAD Model:
-
- Datasheet:
- IMT17T110
Rohm Semiconductor IMT17T110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMT17T110.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMT17
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product200MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)600mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 3V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency200MHz
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMT17T110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMT17T110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMT17T110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMT17T110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMT17T110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMT17T110 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 50V 0.5A 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:600mV; Power Dissipation:300mW; Min ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Transistor Type: General Purpose; Transition Frequency ft: 200MHz
Trans GP BJT PNP 50V 0.5A 6-Pin SMT T/R
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:600mV; Power Dissipation:300mW; Min ;RoHS Compliant: Yes
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: -500mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Transistor Type: General Purpose; Transition Frequency ft: 200MHz
The three parts on the right have similar specifications to IMT17T110.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeCurrent - Collector (Ic) (Max)Contact PlatingWeightFrequencyCollector Emitter Saturation VoltageHeightLengthWidthMax FrequencyVCEsat-MaxView Compare
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IMT17T110Surface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2005e1yesObsolete1 (Unlimited)6EAR99TIN SILVER COPPER8541.21.00.75BIP General Purpose Small Signal-50V300mWGULL WING260-500mA10MT1762PNPDual300mWAMPLIFIER200MHz2 PNP (Dual)600mV500mA120 @ 100mA 3V100nA ICBO600mV @ 50mA, 500mA50V200MHz50V-60V-5V120No SVHCNoROHS3 CompliantLead Free------------ -
Surface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2010e1yesActive1 (Unlimited)6EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-300mWGULL WING260-10-62PNPDual--260MHz2 PNP (Dual)12V500mA270 @ 10mA 2V100nA ICBO250mV @ 10mA, 200mA12V260MHz-15V6V--NoROHS3 CompliantLead Free13 Weeks500mA---------
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Surface MountSurface MountSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)6EAR99--Other Transistors-300mWGULL WING260-40MT1762PNPDual300mW-200MHz2 PNP (Dual)50V500mA120 @ 100mA 3V100nA ICBO600mV @ 50mA, 500mA50V200MHz50V60V5V-No SVHCNoROHS3 CompliantLead Free19 Weeks-Tin29.993795mg200MHz-600mV1.1mm3mm1.6mm--
-
Surface MountSurface MountSC-74, SOT-4576SILICON150°C TJCut Tape (CT)1996-yesActive1 (Unlimited)6EAR99-8541.21.00.75Other Transistors-50V300mWGULL WING260-150mA10*MT162PNPDual300mWAMPLIFIER140MHz2 PNP (Dual)50V150mA120 @ 1mA 6V100nA ICBO500mV @ 5mA, 50mA50V140MHz50V-60V-6V120No SVHCNoROHS3 CompliantLead Free13 Weeks-----500mV1.1mm2.9mm1.6mm100MHz0.5 V
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