Diodes Incorporated MMDT2227M-7
- Part Number:
- MMDT2227M-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 4538796-MMDT2227M-7
- Description:
- TRANS NPN/PNP 40V/60V 0.6A SOT26
- Datasheet:
- MMDT2227M-7
Diodes Incorporated MMDT2227M-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMDT2227M-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6
- Number of Pins6
- Weight29.993795mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMDT2227M
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Transistor TypeNPN, PNP
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)40V 60V
- Transition Frequency300MHz
- Max Breakdown Voltage60V
- Frequency - Transition300MHz 200MHz
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Height1.1mm
- Length3mm
- Width1.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The Diodes Inc. MMDT2227M-7 Transistors - Bipolar (BJT) - Arrays are a versatile and reliable solution for a variety of applications. This device is a NPN/PNP transistor array with a maximum voltage rating of 40V/60V and a maximum current rating of 0.6A. It is housed in a SOT26 package, making it ideal for space-constrained applications. The MMDT2227M-7 is designed to provide superior performance and reliability in a wide range of applications, including power management, audio, and automotive. It is also RoHS compliant, making it an environmentally friendly choice. With its high performance and reliability, the MMDT2227M-7 is an excellent choice for any application requiring a reliable and versatile transistor array.
MMDT2227M-7 More Descriptions
MMDT2227M Series 40V/60V 0.6 A 300 mW NPN/PNP SMT Transistor - SOT-26
Bipolar Array, Npn, Pnp, 40V/0.6A/Sot26 Rohs Compliant: Yes |Diodes Inc. MMDT2227M-7
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans GP BJT NPN/PNP 40V 0.6A 300mW 6-Pin SOT-26 T/R
NPN/PNP Small Signal Transistor SOT-26 | Diodes Inc MMDT2227M-7
BIPOLAR TRANSISTOR COMPLEMENTARY NPN/PNP SOT-2300mW 100@150mA,10V 600mA 1PCSNPN&1PCSPNP SOT-23-6 Bipolar Transistors - BJT ROHS
BIPOLAR ARRAY, NPN, PNP, 40V/0.6A/SOT26;
Bipolar Array, Npn, Pnp, 40V/0.6A/Sot26 Rohs Compliant: Yes |Diodes Inc. MMDT2227M-7
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Trans GP BJT NPN/PNP 40V 0.6A 300mW 6-Pin SOT-26 T/R
NPN/PNP Small Signal Transistor SOT-26 | Diodes Inc MMDT2227M-7
BIPOLAR TRANSISTOR COMPLEMENTARY NPN/PNP SOT-2
BIPOLAR ARRAY, NPN, PNP, 40V/0.6A/SOT26;
The three parts on the right have similar specifications to MMDT2227M-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal PositionReference StandardConfigurationCase ConnectionPower - MaxPolarity/Channel TypeTurn Off Time-Max (toff)Turn On Time-Max (ton)Voltage - Rated DCReach Compliance CodeQualification StatusContinuous Collector CurrentTerminationCollector Emitter Saturation VoltageView Compare
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MMDT2227M-715 WeeksSurface MountSurface MountSOT-23-6629.993795mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)BIP General Purpose Small Signal300mWGULL WING260600mA300MHz40MMDT2227M62NPN, PNPDual300mWSWITCHING300MHzNPN, PNP1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA60V40V 60V300MHz60V300MHz 200MHz75V6V351.1mm3mm1.6mmNo SVHCNoROHS3 CompliantLead Free---------------
-
15 WeeksSurface MountSurface Mount6-XFDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)2016e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-370mWNO LEADNOT SPECIFIED--NOT SPECIFIED--2---SWITCHING-NPN, PNP Complementary300mV200mA100 @ 10mA 1V50nA300mV @ 5mA, 50mA40V-300MHz40V300MHz--------ROHS3 Compliant-DUALAEC-Q101SEPARATE, 2 ELEMENTSCOLLECTOR370mWNPN AND PNP250ns70ns------
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-Surface MountSurface Mount6-TSSOP, SC-88, SOT-36366.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2003e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn85Pb15)-200mWGULL WING235600mA-10MMDT2222A62NPNDual--300MHz2 NPN (Dual)1V600mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V-300MHz40V-75V6V1001mm2.2mm1.35mmNo SVHC-Non-RoHS CompliantContains Lead------285ns35ns40Vnot_compliantNot Qualified600mA--
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19 WeeksSurface MountSurface MountSOT-563, SOT-66663.005049mgSILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)6EAR99Matte Tin (Sn)Other Transistors150mWFLAT260-200mA250MHz40MMDT3906VC62PNPDual150mWSWITCHING250MHz2 PNP (Dual)40V200mA100 @ 10mA 1V-400mV @ 5mA, 50mA40V-250MHz40V-40V5V60600μm1.6mm1.2mmNo SVHCNoROHS3 CompliantLead Free------300ns70ns-40V---SMD/SMT-400mV
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