Rohm Semiconductor IMT1AT110
- Part Number:
- IMT1AT110
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2460669-IMT1AT110
- Description:
- TRANS 2PNP 50V 0.15A 6SMT
- ECAD Model:
-
- Datasheet:
- IMT1AT110
Rohm Semiconductor IMT1AT110 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor IMT1AT110.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingCut Tape (CT)
- Published1996
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-150mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MT1
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product140MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency100MHz
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-6V
- hFE Min120
- VCEsat-Max0.5 V
- Height1.1mm
- Length2.9mm
- Width1.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IMT1AT110 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMT1AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMT1AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IMT1AT110 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IMT1AT110. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IMT1AT110 More Descriptions
IMT1A Series -50 V -150 mA Dual PNP General Purpose Transistor - SMT-6
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
ROHM IMT1AT110 Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-74 | ROHM Semiconductor IMT1AT110
50V 300mW 120@1mA,6V 150mA 2PCSPNP SOT-23-6 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 50V 0.15A 300mW 6-Pin SMT T/R
Transistor Dual, 50V, Pnp/Pnp, Sc-74; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:150Ma Rohs Compliant: Yes |Rohm IMT1AT110
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: -150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 140MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Transistor Type: General Purpose; Transition Frequency ft: 140MHz
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
ROHM IMT1AT110 Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-74 | ROHM Semiconductor IMT1AT110
50V 300mW 120@1mA,6V 150mA 2PCSPNP SOT-23-6 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 50V 0.15A 300mW 6-Pin SMT T/R
Transistor Dual, 50V, Pnp/Pnp, Sc-74; Transistor Polarity:Dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current Npn:-; Continuous Collector Current Pnp:150Ma Rohs Compliant: Yes |Rohm IMT1AT110
TRANSISTOR DUAL SC-74 PNP/PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 300mW; DC Collector Current: -150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 140MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Transistor Type: General Purpose; Transition Frequency ft: 140MHz
The three parts on the right have similar specifications to IMT1AT110.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodeTerminal FinishCurrent - Collector (Ic) (Max)Power - MaxView Compare
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IMT1AT11013 WeeksSurface MountSurface MountSC-74, SOT-4576SILICON150°C TJCut Tape (CT)1996yesActive1 (Unlimited)6EAR998541.21.00.75Other Transistors-50V300mWGULL WING260-150mA10*MT162PNPDual300mWAMPLIFIER140MHz2 PNP (Dual)50V150mA120 @ 1mA 6V100nA ICBO500mV @ 5mA, 50mA50V100MHz140MHz-500mV50V-60V-6V1200.5 V1.1mm2.9mm1.6mmNo SVHCNoROHS3 CompliantLead Free----- -
13 WeeksSurface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2010yesActive1 (Unlimited)6EAR998541.21.00.75Other Transistors-300mWGULL WING260-10-62PNPDual--260MHz2 PNP (Dual)12V500mA270 @ 10mA 2V100nA ICBO250mV @ 10mA, 200mA12V-260MHz--15V6V------NoROHS3 CompliantLead Freee1Tin/Silver/Copper (Sn/Ag/Cu)500mA-
-
-Surface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2005yesObsolete1 (Unlimited)6EAR998541.21.00.75BIP General Purpose Small Signal-50V300mWGULL WING260-500mA10MT1762PNPDual300mWAMPLIFIER200MHz2 PNP (Dual)600mV500mA120 @ 100mA 3V100nA ICBO600mV @ 50mA, 500mA50V-200MHz-50V-60V-5V120----No SVHCNoROHS3 CompliantLead Freee1TIN SILVER COPPER--
-
10 WeeksSurface MountSurface MountSC-74, SOT-4576SILICON150°C TJTape & Reel (TR)2008yesNot For New Designs1 (Unlimited)6EAR998541.21.00.75Other Transistors-300mWGULL WING260-10*MT162PNPDual-AMPLIFIER140MHz2 PNP (Dual)500mV150mA120 @ 1mA 6V100nA ICBO500mV @ 5mA, 50mA50V-140MHz-500mV50V-60V-6V1200.5 V----NoROHS3 Compliant-e1Tin/Silver/Copper (Sn/Ag/Cu)-300mW
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