Diodes Incorporated FZT1053ATA
- Part Number:
- FZT1053ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845069-FZT1053ATA
- Description:
- TRANS NPN 75V 4.5A SOT-223
- Datasheet:
- FZT1053ATA
Diodes Incorporated FZT1053ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT1053ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC75V
- Max Power Dissipation2.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating4.5A
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT1053A
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product140MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)75V
- Max Collector Current4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 500mA 2V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic440mV @ 200mA, 4.5A
- Collector Emitter Breakdown Voltage75V
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage440mV
- Max Breakdown Voltage75V
- Collector Base Voltage (VCBO)150V
- Emitter Base Voltage (VEBO)7.5V
- hFE Min300
- Continuous Collector Current4.5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT1053ATA Overview
In this device, the DC current gain is 300 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 440mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 440mV @ 200mA, 4.5A.Maintaining the continuous collector voltage at 4.5A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4.5A).140MHz is present in the transition frequency.An input voltage of 75V volts is the breakdown voltage.Maximum collector currents can be below 4.5A volts.
FZT1053ATA Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 440mV
the vce saturation(Max) is 440mV @ 200mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 140MHz
FZT1053ATA Applications
There are a lot of Diodes Incorporated
FZT1053ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 300 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 440mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 440mV @ 200mA, 4.5A.Maintaining the continuous collector voltage at 4.5A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4.5A).140MHz is present in the transition frequency.An input voltage of 75V volts is the breakdown voltage.Maximum collector currents can be below 4.5A volts.
FZT1053ATA Features
the DC current gain for this device is 300 @ 500mA 2V
a collector emitter saturation voltage of 440mV
the vce saturation(Max) is 440mV @ 200mA, 4.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4.5A
a transition frequency of 140MHz
FZT1053ATA Applications
There are a lot of Diodes Incorporated
FZT1053ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT1053ATA More Descriptions
FZT1053A Series NPN 4.5 A 75 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 75V 4.5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Power Bipolar Transistor, 4.5A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
NPN Transistor,4.5A,75V,SOT223 | Diodes Inc FZT1053ATA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 75V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 2.5W; DC Collector Current: 4.5A; DC Current Gain hFE: 450hFE; Transistor Case
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:75V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2.5W; DC Collector Current:4.5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:440mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4.5A; Current Ic Continuous a Max:4.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.5W; Power Dissipation Ptot Max:2.5W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT1053A; Tape Width:12mm; Termination Type:SMD; Voltage Vcbo:150V
Trans GP BJT NPN 75V 4.5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Power Bipolar Transistor, 4.5A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
NPN Transistor,4.5A,75V,SOT223 | Diodes Inc FZT1053ATA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 75V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 2.5W; DC Collector Current: 4.5A; DC Current Gain hFE: 450hFE; Transistor Case
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:75V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2.5W; DC Collector Current:4.5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:440mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4.5A; Current Ic Continuous a Max:4.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.5W; Power Dissipation Ptot Max:2.5W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT1053A; Tape Width:12mm; Termination Type:SMD; Voltage Vcbo:150V
The three parts on the right have similar specifications to FZT1053ATA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeHTS CodeCurrent - Collector (Ic) (Max)ConfigurationRadiation HardeningView Compare
-
FZT1053ATA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3noActive1 (Unlimited)4SMD/SMTEAR99Matte Tin (Sn)Other Transistors75V2.5WDUALGULL WING260not_compliant4.5A140MHz40FZT1053A4R-PDSO-G4Not Qualified1Single2.5WCOLLECTORSWITCHING140MHzNPNNPN75V4.5A300 @ 500mA 2V10nA440mV @ 200mA, 4.5A75V140MHz440mV75V150V7.5V3004.5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free-----
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4-EAR99Matte Tin (Sn)--12V2.5WDUALGULL WING260--5A-40FZT1147A4R-PDSO-G4Not Qualified1Single-COLLECTOR-115MHzPNPPNP400mV5A250 @ 500mA 2V100nA400mV @ 50mA, 5A12V115MHz-250mV--15V-5V--5A---No SVHCRoHS CompliantLead Free8541.29.00.755A--
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4-EAR99Matte Tin (Sn)-17.5V2.5WDUALGULL WING260-5A-40FZT1048A4R-PDSO-G4Not Qualified1--COLLECTORSWITCHING150MHzNPNNPN350mV5A300 @ 1A 2V10nA350mV @ 25mA, 5A17.5V150MHz--50V5V-5A---No SVHCRoHS CompliantLead Free8541.29.00.75-SINGLE-
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4-EAR99Matte Tin (Sn)-60V2.5WDUALGULL WING260-5A155MHz40FZT1051A4--1Single2.5WCOLLECTORSWITCHING155MHzNPNNPN40V5A270 @ 1A 2V10nA340mV @ 100mA, 5A40V155MHz--150V5V-5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free---No
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
03 January 2024
Exploring the 2SK2225 Transistor's Capabilities
Ⅰ. Introduction to 2SK2225Ⅱ. Specifications of 2SK2225Ⅲ. The manufacturer of 2SK2225Ⅳ. Absolute maximum ratings of 2SK2225Ⅴ. How to use 2SK2225?Ⅵ. Where is 2SK2225 used?Ⅶ. How to improve the... -
04 January 2024
ULN2003ADR: A Powerful Chip that Drives High Current Loads
Ⅰ. ULN2003ADR descriptionⅡ. Symbol, footprint and pin configuration of ULN2003ADRⅢ. Specifications of ULN2003ADRⅣ. What are the application fields of ULN2003ADR?Ⅴ. Simplified block diagram of ULN2003ADRⅥ. How to correctly... -
04 January 2024
TPS5430DDAR Converter Replacements, Characteristics, Applications and Development
Ⅰ. What is TPS5430DDAR?Ⅱ. Characteristics of TPS5430DDARⅢ. Specifications of TPS5430DDARⅣ. Market trend of TPS5430DDARⅤ. Pin configuration and functions of TPS5430DDARⅥ. Typical applications of TPS5430DDARⅦ. Development of TPS5430DDARTPS5430DDAR is... -
05 January 2024
N76E003AT20 Microcontroller Manufacturer, Specifications, Features and Package
Ⅰ. Introduction to N76E003AT20Ⅱ. N76E003AT20 manufacturerⅢ. Specifications of N76E003AT20Ⅳ. Features of N76E003AT20Ⅴ. Peripheral equipment and functions of N76E003AT20Ⅵ. Programming and burning of N76E003AT20Ⅶ. Package of N76E003AT20Ⅷ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.