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FDMC7200S

Fairchild/ON Semiconductor FDMC7200S

Part Number:
FDMC7200S
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585812-FDMC7200S
Description:
MOSFET 2N-CH 30V 7A/13A POWER33
ECAD Model:
Datasheet:
FDMC7200S

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Specifications
Fairchild/ON Semiconductor FDMC7200S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7200S.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    186mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    1W
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN SOURCE
  • Power - Max
    700mW 1W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    22m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    660pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7A 13A
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (ID)
    13A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    30 pF
  • RoHS Status
    ROHS3 Compliant
Description
FDMC7200S          Description   The device includes two dedicated N-channel MOSFET with a package power of 33 (3 Mm X 3 Mm MLP). The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.  
FDMC7200S             Features   Q1: N-Channel Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A RoHS Compliant
FDMC7200S              Applications Notebook PC  


 

FDMC7200S More Descriptions
Transistor MOSFET Array Dual N-CH 30V 23A/46A 8-Pin Power 33 T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET 30V, 22mΩ, 10mΩ
This device includes two specialized N-Channel MOSFETs in a due power33 (3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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