Fairchild/ON Semiconductor FDG6320C
- Part Number:
- FDG6320C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473465-FDG6320C
- Description:
- MOSFET N/P-CH 25V SC70-6
- ECAD Model:
-
- Datasheet:
- FDG6320C
Fairchild/ON Semiconductor FDG6320C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6320C.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight28mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance4Ohm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Current Rating220mA
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time5 ns
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4 Ω @ 220mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
- Current - Continuous Drain (Id) @ 25°C220mA 140mA
- Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
- Rise Time8ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)8 ns
- Turn-Off Delay Time9 ns
- Continuous Drain Current (ID)220mA
- Threshold Voltage850mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage25V
- Dual Supply Voltage25V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Height1.1mm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDG6320C Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. FDG6320C Features N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 |? @ VGS= 4.5 V, RDS(ON) = 5.0 |? @ VGS= 2.7 V. P-Ch -0.14 A, -25 V, RDS(ON) = 10 |? @ VGS= -4.5 V, RDS(ON) = 13 |? @ VGS= -2.7 V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
FDG6320C Applications
This product is general usage and suitable for many different applications.
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. FDG6320C Features N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 |? @ VGS= 4.5 V, RDS(ON) = 5.0 |? @ VGS= 2.7 V. P-Ch -0.14 A, -25 V, RDS(ON) = 10 |? @ VGS= -4.5 V, RDS(ON) = 13 |? @ VGS= -2.7 V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
FDG6320C Applications
This product is general usage and suitable for many different applications.
FDG6320C More Descriptions
Trans MOSFET N/P-CH 25V 0.22A/0.14A 6-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:220mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SMD, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:220mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
The three parts on the right have similar specifications to FDG6320C.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxDrain to Source Voltage (Vdss)Vgs(th) (Max) @ Id:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Drain Current-Max (Abs) (ID)View Compare
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FDG6320CACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)6SMD/SMTEAR994OhmLOGIC LEVEL COMPATIBLEOther Transistors300mWGULL WING220mA2DualENHANCEMENT MODE300mW5 nsN and P-ChannelSWITCHING4 Ω @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V220mA 140mA0.4nC @ 4.5V8nsN-CHANNEL AND P-CHANNEL8 ns9 ns220mA850mV8V25V25VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.1mm2mm1.25mmNo SVHCNoROHS3 CompliantLead Free-------------------- -
----Surface Mount6-TSSOP, SC-88, SOT-363----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------------N and P-Channel-4Ohm @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V220mA 140mA0.4nC @ 4.5V-----------Logic Level Gate-------SC-88 (SC-70-6)300mW25V----------------
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-----------------------------------------------------------1.5V @ 250µASC-70-6Automotive, AEC-Q101, PowerTrench®300 mOhm @ 700mA, 4.5V300mWTape & Reel (TR)6-TSSOP, SC-88, SOT-363-55°C ~ 150°C (TJ)Surface Mount113pF @ 10V1.5nC @ 4.5VN and P-ChannelLogic Level Gate20V700mA, 600mA-
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)6-EAR99450mOhmLOGIC LEVEL COMPATIBLEOther Transistors300mWGULL WING500mA2DualENHANCEMENT MODE300mW-N and P-ChannelSWITCHING450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V500mA 410mA2.3nC @ 4.5V8nsN-CHANNEL AND P-CHANNEL8 ns55 ns500mA800mV8V25V-METAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.1mm--No SVHCNoROHS3 CompliantLead Free------------------0.5A
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