Fairchild/ON Semiconductor FDG6318PZ

Name: FDG6318PZ
Brand: Fairchild/ON Semiconductor
SKU: 2473351-FDG6318PZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDG6318PZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2473351-FDG6318PZ

Description:: MOSFET 2P-CH 20V 0.5A SC70-6

ECAD Model:

Datasheet:: FDG6318PZ

Specifications

Fairchild/ON Semiconductor FDG6318PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6318PZ.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
780MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
300mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
10 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
780m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
85.4pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
1.62nC @ 4.5V
Rise Time
13ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
500mA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1mm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDG6318PZ Description
These dual P-channel logic level enhancement modes MOSFET are tailor-made to minimize on-resistance. The device is specially designed for bipolar digital transistors and small signal MOSFET.
FDG6318PZ Features -0.5A, -20V RDS(ON) = 780 mΩ @ VGS = -4.5V RDS(ON) = 1200 mΩ @ VGS = -2.5V Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(TH) < 1.5V). Gate-Source Zener for ESD ruggedness (>1.4kV HumanBody Model). Compact industry standard SC-70-6 surface mountpackage.
FDG6318PZ Applications
This product is general usage and suitable for many different applications.

FDG6318PZ More Descriptions

Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/RAvnet Japan
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital transistors and small signal MOSFETS
MOSFET, DUAL P-CH, -20V, -0.5A, SC-70-6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -500mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.58ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 300mW; Transistor Case Style: SC-70; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to FDG6318PZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Current - Continuous Drain (Id) @ 25°C

Contact Plating

Series

Threshold Voltage

Max Junction Temperature (Tj)

REACH SVHC

Additional Feature

Polarity/Channel Type

View Compare
FDG6318PZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2003

e3

yes

Active

1 (Unlimited)

6

EAR99

780MOhm

Tin (Sn)

Other Transistors

-20V

300mW

GULL WING

260

-500mA

30

2

Dual

ENHANCEMENT MODE

300mW

10 ns

2 P-Channel (Dual)

SWITCHING

780m Ω @ 500mA, 4.5V

1.5V @ 250μA

85.4pF @ 10V

1.62nC @ 4.5V

13ns

20V

13 ns

40 ns

500mA

12V

0.5A

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1mm

2mm

1.25mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDG6320C_D87Z

Fairchild/ON Semiconductor

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N and P-Channel

-

4Ohm @ 220mA, 4.5V

1.5V @ 250μA

9.5pF @ 10V

0.4nC @ 4.5V

-

25V

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

SC-88 (SC-70-6)

300mW

220mA 140mA

-

-

-

-

-

-

-

FDG6318PZ vs FDG6320C_D87Z
FDG6335N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

6

EAR99

300MOhm

-

FET General Purpose Power

20V

300mW

GULL WING

-

700mA

-

2

Dual

ENHANCEMENT MODE

300mW

5 ns

2 N-Channel (Dual)

SWITCHING

300m Ω @ 700mA, 4.5V

1.5V @ 250μA

113pF @ 10V

1.4nC @ 4.5V

7ns

-

7 ns

9 ns

700mA

12V

0.7A

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.1mm

2mm

1.25mm

No

ROHS3 Compliant

Lead Free

-

-

-

Tin

PowerTrench®

1.1V

150°C

No SVHC

-

-

FDG6318PZ vs FDG6335N
FDG6321C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

6

EAR99

450mOhm

-

Other Transistors

-

300mW

GULL WING

-

500mA

-

2

Dual

ENHANCEMENT MODE

300mW

-

N and P-Channel

SWITCHING

450m Ω @ 500mA, 4.5V

1.5V @ 250μA

50pF @ 10V

2.3nC @ 4.5V

8ns

-

8 ns

55 ns

500mA

8V

0.5A

25V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.1mm

-

-

No

ROHS3 Compliant

Lead Free

-

-

500mA 410mA

Tin

-

800mV

150°C

No SVHC

LOGIC LEVEL COMPATIBLE

N-CHANNEL AND P-CHANNEL

FDG6318PZ vs FDG6321C