Fairchild/ON Semiconductor FDG6318P

Name: FDG6318P
Brand: Fairchild/ON Semiconductor
SKU: 2474738-FDG6318P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDG6318P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2474738-FDG6318P

Description:: MOSFET 2P-CH 20V 0.5A SC70-6

ECAD Model:

Datasheet:: FDG6318P

Specifications

Fairchild/ON Semiconductor FDG6318P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6318P.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
28mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
780MOhm
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
300mW
Terminal Form
GULL WING
Current Rating
-500mA
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
6 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
780m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
83pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
1.2nC @ 4.5V
Rise Time
12ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
6 ns
Continuous Drain Current (ID)
500mA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1mm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

FDG6318P   Description
  These dual P-channel logic level enhancement modes MOSFET are produced using on Semiconductor's advanced PowerTritch process, which is tailor-made to minimize on-resistance. The device is designed for low-voltage applications as a substitute for bipolar digital transistors and small-signal MOSFET.
FDG6318P   Features -0.5A, -20V RDS(ON) = 780 mΩ @ VGS = -4.5V RDS(ON) = 1200 mΩ @ VGS = -2.5V Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th) < 1.5V) Compact industry standard SC70-6 surface mountpackage
FDG6318P   Applications This product is general usage and suitable for many different applications.

FDG6318P More Descriptions

Transistor MOSFET Array Dual P-CH 20V 0.5A 6-Pin SC-70 T/R
Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ
TAPE REEL/20V/12V, 780/1200MO,PCH,DUAL,SC70-6,240A GOX ,PTII
Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Product Comparison

The three parts on the right have similar specifications to FDG6318P.

Image

Part Number

Manufacturer

Lifecycle Status

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Current - Continuous Drain (Id) @ 25°C

Vgs(th) (Max) @ Id:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Additional Feature

Polarity/Channel Type

Threshold Voltage

Max Junction Temperature (Tj)

REACH SVHC

View Compare
FDG6318P

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2003

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

780MOhm

Other Transistors

-20V

300mW

GULL WING

-500mA

2

Dual

ENHANCEMENT MODE

300mW

6 ns

2 P-Channel (Dual)

SWITCHING

780m Ω @ 500mA, 4.5V

1.5V @ 250μA

83pF @ 10V

1.2nC @ 4.5V

12ns

20V

12 ns

6 ns

500mA

12V

0.5A

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1mm

2mm

1.25mm

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDG6320C_D87Z

Fairchild/ON Semiconductor

-

-

-

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

N and P-Channel

-

4Ohm @ 220mA, 4.5V

1.5V @ 250μA

9.5pF @ 10V

0.4nC @ 4.5V

-

25V

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

SC-88 (SC-70-6)

300mW

220mA 140mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDG6318P vs FDG6320C_D87Z
FDG6332C_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.5V @ 250µA

SC-70-6

Automotive, AEC-Q101, PowerTrench®

300 mOhm @ 700mA, 4.5V

300mW

Tape & Reel (TR)

6-TSSOP, SC-88, SOT-363

-55°C ~ 150°C (TJ)

Surface Mount

113pF @ 10V

1.5nC @ 4.5V

N and P-Channel

Logic Level Gate

20V

700mA, 600mA

-

-

-

-

-

-

FDG6318P vs FDG6332C_F085
FDG6321C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

Tin

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6

28mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e3

yes

Active

1 (Unlimited)

6

EAR99

450mOhm

Other Transistors

-

300mW

GULL WING

500mA

2

Dual

ENHANCEMENT MODE

300mW

-

N and P-Channel

SWITCHING

450m Ω @ 500mA, 4.5V

1.5V @ 250μA

50pF @ 10V

2.3nC @ 4.5V

8ns

-

8 ns

55 ns

500mA

8V

0.5A

25V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.1mm

-

-

No

ROHS3 Compliant

Lead Free

-

-

500mA 410mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

10 Weeks

LOGIC LEVEL COMPATIBLE

N-CHANNEL AND P-CHANNEL

800mV

150°C

No SVHC

FDG6318P vs FDG6321C