Fairchild/ON Semiconductor FDG6303N
- Part Number:
- FDG6303N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473206-FDG6303N
- Description:
- MOSFET 2N-CH 25V 0.5A SC70-6
- Datasheet:
- FDG6303N
Fairchild/ON Semiconductor FDG6303N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6303N.
- Package / CaseSC70-6
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDG6303N Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDG6303N or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDG6303N. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDG6303N or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDG6303N. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDG6303N More Descriptions
Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R
Transistor MOSFET Array Dual N-CH 25V 0.5A 6-Pin SC-70 T/RAvnet Japan
MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Transistor MOSFET Array Dual N-CH 25V 0.5A 6-Pin SC-70 T/RAvnet Japan
MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
The three parts on the right have similar specifications to FDG6303N.
-
ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeSupplier Device PackageOperating TemperaturePart StatusMoisture Sensitivity Level (MSL)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)FET FeatureMountNumber of PinsPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLead FreeLifecycle StatusFactory Lead TimeWeightTransistor Element MaterialSeriesJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTerminal FormOperating ModeTurn On Delay TimeTransistor ApplicationFET TechnologyHeightLengthWidthRadiation HardeningView Compare
-
FDG6303NSC70-6Tape & Reel (TR)RoHS Compliant---------------------------------------------------------
-
6-TSSOP, SC-88, SOT-363Tape & Reel (TR)-Surface MountSC-88 (SC-70-6)-55°C~150°C TJObsolete1 (Unlimited)300mWN and P-Channel4Ohm @ 220mA, 4.5V1.5V @ 250μA9.5pF @ 10V220mA 410mA0.4nC @ 4.5V25VLogic Level Gate------------------------------------------
-
6-TSSOP, SC-88, SOT-363Tape & Reel (TR)RoHS CompliantSurface MountSC-88 (SC-70-6)-55°C~150°C TJObsolete1 (Unlimited)300mW2 N-Channel (Dual)450mOhm @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V500mA2.3nC @ 4.5V25VLogic Level GateSurface Mount62002150°C-55°C25V300mW500mA2Dual300mW8.5ns8.5 ns17 ns500mA8V25V50pF340mOhm450 mΩLead Free---------------------
-
6-TSSOP, SC-88, SOT-363Tape & Reel (TR)ROHS3 CompliantSurface Mount--55°C~150°C TJActive1 (Unlimited)-2 P-Channel (Dual)400m Ω @ 600mA, 4.5V1.5V @ 250μA153pF @ 10V-2.5nC @ 4.5V20VLogic Level GateSurface Mount6----20V300mW-600mA2Dual300mW15ns15 ns7 ns600mA8V-20V---Lead FreeACTIVE (Last Updated: 2 days ago)10 Weeks28mgSILICONPowerTrench®e3yes6EAR99400MOhmTin (Sn)Other TransistorsGULL WINGENHANCEMENT MODE5 nsSWITCHINGMETAL-OXIDE SEMICONDUCTOR1mm2mm1.25mmNo
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
15 December 2023
A Comprehensive Guide to Harnessing the Power of the TDA7850 Audio Amplifier
Ⅰ. TDA7850 overviewⅡ. How does the TDA7850 perform in terms of sound quality?Ⅲ. Specifications of TDA7850 audio amplifierⅣ. Electrical characteristic curves of TDA7850 audio amplifierⅤ. What kind of... -
18 December 2023
LT4320 Ideal Diode Bridge Controllers Subverts the Traditional Bridge Rectifier
Ⅰ. What is LT4320?Ⅱ. How does LT4320 overcome the shortcomings of full-wave rectification?Ⅲ. Which manufacturer makes the LT4320?Ⅳ. Pin configuration of LT4320Ⅴ. Three-phase ideal rectification based on LT4320Ⅵ.... -
18 December 2023
Can CR2032 Button Battery Be Recharged?
Ⅰ. What is CR2032 battery?Ⅱ. Development of CR2032 lithium button batteryⅢ. Five major brands of CR2032 button batteriesⅣ. Applications and application circuit of CR2032 button batteryⅤ. Is the... -
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.