FDG6303N

Fairchild/ON Semiconductor FDG6303N

Part Number:
FDG6303N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473206-FDG6303N
Description:
MOSFET 2N-CH 25V 0.5A SC70-6
ECAD Model:
Datasheet:
FDG6303N

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  • FDG6303N Detail Images
Specifications
Fairchild/ON Semiconductor FDG6303N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDG6303N.
  • Package / Case
    SC70-6
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
FDG6303N Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDG6303N or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDG6303N. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDG6303N More Descriptions
Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R
Transistor MOSFET Array Dual N-CH 25V 0.5A 6-Pin SC-70 T/RAvnet Japan
MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Product Comparison
The three parts on the right have similar specifications to FDG6303N.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mounting Type
    Supplier Device Package
    Operating Temperature
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    FET Feature
    Mount
    Number of Pins
    Published
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Weight
    Transistor Element Material
    Series
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Terminal Form
    Operating Mode
    Turn On Delay Time
    Transistor Application
    FET Technology
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • FDG6303N
    FDG6303N
    SC70-6
    Tape & Reel (TR)
    RoHS Compliant
    -
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  • FDG6322C_D87Z
    6-TSSOP, SC-88, SOT-363
    Tape & Reel (TR)
    -
    Surface Mount
    SC-88 (SC-70-6)
    -55°C~150°C TJ
    Obsolete
    1 (Unlimited)
    300mW
    N and P-Channel
    4Ohm @ 220mA, 4.5V
    1.5V @ 250μA
    9.5pF @ 10V
    220mA 410mA
    0.4nC @ 4.5V
    25V
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    -
    -
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  • FDG6313N
    6-TSSOP, SC-88, SOT-363
    Tape & Reel (TR)
    RoHS Compliant
    Surface Mount
    SC-88 (SC-70-6)
    -55°C~150°C TJ
    Obsolete
    1 (Unlimited)
    300mW
    2 N-Channel (Dual)
    450mOhm @ 500mA, 4.5V
    1.5V @ 250μA
    50pF @ 10V
    500mA
    2.3nC @ 4.5V
    25V
    Logic Level Gate
    Surface Mount
    6
    2002
    150°C
    -55°C
    25V
    300mW
    500mA
    2
    Dual
    300mW
    8.5ns
    8.5 ns
    17 ns
    500mA
    8V
    25V
    50pF
    340mOhm
    450 mΩ
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDG6308P
    6-TSSOP, SC-88, SOT-363
    Tape & Reel (TR)
    ROHS3 Compliant
    Surface Mount
    -
    -55°C~150°C TJ
    Active
    1 (Unlimited)
    -
    2 P-Channel (Dual)
    400m Ω @ 600mA, 4.5V
    1.5V @ 250μA
    153pF @ 10V
    -
    2.5nC @ 4.5V
    20V
    Logic Level Gate
    Surface Mount
    6
    -
    -
    -
    -20V
    300mW
    -600mA
    2
    Dual
    300mW
    15ns
    15 ns
    7 ns
    600mA
    8V
    -20V
    -
    -
    -
    Lead Free
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    28mg
    SILICON
    PowerTrench®
    e3
    yes
    6
    EAR99
    400MOhm
    Tin (Sn)
    Other Transistors
    GULL WING
    ENHANCEMENT MODE
    5 ns
    SWITCHING
    METAL-OXIDE SEMICONDUCTOR
    1mm
    2mm
    1.25mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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