Rohm Semiconductor EMH11T2R
- Part Number:
- EMH11T2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2844422-EMH11T2R
- Description:
- TRANS 2NPN PREBIAS 0.15W EMT6
- Datasheet:
- EMH11T2R
Rohm Semiconductor EMH11T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMH11T2R.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating50mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MH11
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation150mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min30
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMH11T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH11T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH11T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH11T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH11T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMH11T2R More Descriptions
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
TRANSISTOR,NPNNPN,50V,0.05A,EMT6; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resis
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TRANSISTOR,NPNNPN,50V,0.05A,EMT6; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:250MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain;RoHS Compliant: Yes
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
TRANSISTOR,NPNNPN,50V,0.05A,EMT6; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resis
Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1 (Unlimited) Tape & Reel (TR) SOT-563, SOT-666 2 NPN - Pre-Biased (Dual) Surface Mount 10k Ω 30 @ 5mA 5V 300mV @ 500μA, 10mA 500nA TRANS 2NPN PREBIAS 0.15W EMT6
TRANSISTOR,NPNNPN,50V,0.05A,EMT6; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:50V; Gain Bandwidth ft Typ:250MHz; Power Dissipation Pd:150mW; DC Collector Current:100mA; DC Current Gain;RoHS Compliant: Yes
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