Rohm Semiconductor EMH10T2R
- Part Number:
- EMH10T2R
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3553704-EMH10T2R
- Description:
- TRANS 2NPN PREBIAS 0.15W EMT6
- Datasheet:
- EMH10T2R
Rohm Semiconductor EMH10T2R technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor EMH10T2R.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn/Cu)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO 21
- HTS Code8541.21.00.75
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MH10
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation150mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- hFE Min80
- Resistor - Base (R1)22k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)22k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
EMH10T2R Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH10T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH10T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet EMH10T2R or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of EMH10T2R. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
EMH10T2R More Descriptions
EMH1 Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - EMT-6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount E
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin EMT T/R
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount E
Trans Digital BJT NPN 50V 100mA 150mW 6-Pin EMT T/R
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ.... -
17 October 2023
IRFP250 Transistor Equivalent, Pin Configuration, Working Principle and More
Ⅰ. Overview of IRFP250Ⅱ. Symbol, footprint and pin configuration of IRFP250Ⅲ. Technical parameters of IRFP250Ⅳ. What are the features of IRFP250?Ⅴ. Working principle of IRFP250Ⅵ. Applications of IRFP250Ⅶ.... -
17 October 2023
A Review of TDA2009A Dual Audio Power Amplifier
Ⅰ. What is TDA2009A?Ⅱ. Symbol, footprint and pin configuration of TDA2009AⅢ. Technical parameters of TDA2009AⅣ. What are the features of TDA2009A?Ⅴ. How does the overheating protection circuit of... -
18 October 2023
What Is CD4017BE CMOS Counter And How It Works?
Ⅰ. Overview of CD4017BE counterⅡ. Symbol, footprint and pin configuration of CD4017BEⅢ. Technical parameters of CD4017BEⅣ. What are the features of CD4017BE?Ⅴ. How does CD4017BE work?Ⅵ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.