Diodes Incorporated DZT2222A-13

Name: DZT2222A-13
Brand: Diodes Incorporated
SKU: 2463016-DZT2222A-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DZT2222A-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2463016-DZT2222A-13

Description:: TRANS NPN 40V 0.6A SOT-223

ECAD Model:

Datasheet:: DZT2222A-13

Specifications

Diodes Incorporated DZT2222A-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DZT2222A-13.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DZT2222A
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
35
Continuous Collector Current
600mA
Turn Off Time-Max (toff)
285ns
Height
1.6mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DZT2222A-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.

DZT2222A-13 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

DZT2222A-13 Applications
There are a lot of Diodes Incorporated
DZT2222A-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DZT2222A-13 More Descriptions

NPN 40 V 600 mA 1 W Surface Mount Transistor - SOT-223
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 40V 0.6A 1000mW 4-Pin(3 Tab) SOT-223 T/R

Certification