Diodes Incorporated DXT790AP5-13

DXT790AP5-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -170mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.

DXT790AP5-13 Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz


DXT790AP5-13 Applications
There are a lot of Diodes Incorporated
DXT790AP5-13 applications of single BJT transistors.


Inverter
Interface
Driver
Muting