Diodes Incorporated DN350T05-7
- Part Number:
- DN350T05-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068979-DN350T05-7
- Description:
- TRANS NPN 350V 0.5A SOT23-3
- Datasheet:
- DN350T05-7
Diodes Incorporated DN350T05-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DN350T05-7.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC350V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDN350T05
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)350V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA 10V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage350V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage350V
- Collector Base Voltage (VCBO)350V
- Emitter Base Voltage (VEBO)5V
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DN350T05-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 350V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DN350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
DN350T05-7 Applications
There are a lot of Diodes Incorporated
DN350T05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 350V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DN350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
DN350T05-7 Applications
There are a lot of Diodes Incorporated
DN350T05-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DN350T05-7 More Descriptions
DN350T05 Series NPN 350 V 300 mW Small Signal Surface Mount Transistor -SOT-23-3
350V 300mW 20@50mA,10V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR SMALL SIGNAL NPN SOT-23 ROHS 3KTrans GP BJT NPN 350V 0.5A 300mW 3-Pin SOT-23 T/R
NPN TRANSISTOR 350V 0,5A SOT23
BIPOLAR, Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation
Transistor, Npn, 350V, 500Ma, 300Mw, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DN350T05-7
BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 30; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
350V 300mW 20@50mA,10V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR SMALL SIGNAL NPN SOT-23 ROHS 3K
NPN TRANSISTOR 350V 0,5A SOT23
BIPOLAR, Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation
Transistor, Npn, 350V, 500Ma, 300Mw, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DN350T05-7
BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 30; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
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