DN350T05-7

Diodes Incorporated DN350T05-7

Part Number:
DN350T05-7
Manufacturer:
Diodes Incorporated
Ventron No:
3068979-DN350T05-7
Description:
TRANS NPN 350V 0.5A SOT23-3
ECAD Model:
Datasheet:
DN350T05-7

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Specifications
Diodes Incorporated DN350T05-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DN350T05-7.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    350V
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DN350T05
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    350V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    350V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    1V
  • Max Breakdown Voltage
    350V
  • Collector Base Voltage (VCBO)
    350V
  • Emitter Base Voltage (VEBO)
    5V
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DN350T05-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 350V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

DN350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz


DN350T05-7 Applications
There are a lot of Diodes Incorporated
DN350T05-7 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
DN350T05-7 More Descriptions
DN350T05 Series NPN 350 V 300 mW Small Signal Surface Mount Transistor -SOT-23-3
350V 300mW 20@50mA,10V 500mA NPN SOT-23 Bipolar Transistors - BJT ROHS
BIPOLAR TRANSISTOR SMALL SIGNAL NPN SOT-23 ROHS 3KTrans GP BJT NPN 350V 0.5A 300mW 3-Pin SOT-23 T/R
NPN TRANSISTOR 350V 0,5A SOT23
BIPOLAR, Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:50MHz; Power Dissipation
Transistor, Npn, 350V, 500Ma, 300Mw, Sot-23; Transistor Polarity:Npn; Collector Emitter Voltage Max:350V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Diodes Inc. DN350T05-7
BIPOLAR, TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 350V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 50MHz; Hfe Min: 30; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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