Diodes Incorporated DMG4800LSD-13

Name: DMG4800LSD-13
Brand: Diodes Incorporated
SKU: 3069605-DMG4800LSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG4800LSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3069605-DMG4800LSD-13

Description:: MOSFET 2N-CH 30V 7.5A 8SO

ECAD Model:

Datasheet:: DMG4800LSD-13

Specifications

Diodes Incorporated DMG4800LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4800LSD-13.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
1.17W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMG4800LSD
Pin Count
8
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.17W
Turn On Delay Time
5.03 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
798pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
8.56nC @ 5V
Rise Time
4.5ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
8.55 ns
Turn-Off Delay Time
26.33 ns
Continuous Drain Current (ID)
7.5A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.016Ohm
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Height
1.7mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The Diodes Inc. DMG4800LSD-13 is a MOSFET 2N-CH 30V 7.5A 8SO transistor array. It is designed to provide high-speed switching and low on-resistance for a wide range of applications. The device is housed in an 8-pin SOIC package and is RoHS compliant.

Features:

• High-speed switching
• Low on-resistance
• 8-pin SOIC package
• RoHS compliant
• 30V drain-source voltage
• 7.5A drain current
• 2N-channel MOSFET

Applications:

The Diodes Inc. DMG4800LSD-13 is suitable for a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics.

DMG4800LSD-13 More Descriptions

DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 9.8A 8-Pin SOIC T/R
MOSFET N-Channel 30V 7.5A SOIC8 | Diodes Inc DMG4800LSD-13
MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 1.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification