Diodes Incorporated DJT4031N-13

Name: DJT4031N-13
Brand: Diodes Incorporated
SKU: 2845821-DJT4031N-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DJT4031N-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2845821-DJT4031N-13

Description:: TRANS NPN 40V 3A SOT-223

ECAD Model:

Datasheet:: DJT4031N-13

Specifications

Diodes Incorporated DJT4031N-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DJT4031N-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
105MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DJT4031
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
1.2W
Transistor Application
SWITCHING
Gain Bandwidth Product
105MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
105MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
Height
1.6mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DJT4031N-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1A 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 105MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.

DJT4031N-13 Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 105MHz

DJT4031N-13 Applications
There are a lot of Diodes Incorporated
DJT4031N-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DJT4031N-13 More Descriptions

DJT4031N Series 40 V 3 A 1.2 W NPN SMT Bipolar Transistor - SOT-223
DIODES INC. DJT4031N-13 Bipolar (BJT) Single Transistor, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
Trans GP BJT NPN 40V 3A 2000mW 4-Pin(3 Tab) SOT-223 T/R
Low VCE(sat) Npn Transistor SOT-223 | Diodes Inc DJT4031N-13
Transistor, Npn, 40V, 500Ma, 1.2W, Sot-223; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:500Ma; Power Dissipation:1.2W; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:-Rohs Compliant: Yes |Diodes Inc. DJT4031N-13
TRANSISTOR, NPN, SOT223 1.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 105MHz; Power Dissipation Pd: 1.2W; DC Collector Current: 500mA; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 100mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 105MHz; Hfe Min: 220; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Low Saturation (BISS)

Certification