Diodes Incorporated DCX56-16-13

Name: DCX56-16-13
Brand: Diodes Incorporated
SKU: 2472381-DCX56-16-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DCX56-16-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2472381-DCX56-16-13

Description:: TRANS NPN 80V 1A SOT89-3

ECAD Model:

Datasheet:: DCX56-16-13

Specifications

Diodes Incorporated DCX56-16-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DCX56-16-13.

Factory Lead Time
9 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DCX56
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
1.5mm
Length
4.5mm
Width
2.48mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DCX56-16-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.

DCX56-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

DCX56-16-13 Applications
There are a lot of Diodes Incorporated
DCX56-16-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DCX56-16-13 More Descriptions

DCX56 Series NPN 1 W 80 V 1 A Surface Mount Epitaxial Transistor - SOT-89
Trans GP BJT NPN 80V 1A 1000mW 4-Pin(3 Tab) SOT-89 T/R
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to DCX56-16-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

RoHS Status

Power - Max

JESD-30 Code

View Compare
DCX56-16-13

Diodes Incorporated

9 Weeks

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2007

e3

yes

Discontinued

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

1W

DUAL

FLAT

260

200MHz

40

DCX56

4

1

Single

1W

COLLECTOR

SWITCHING

200MHz

NPN

NPN

80V

1A

100 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

200MHz

80V

100V

5V

63

1.5mm

4.5mm

2.48mm

No

ROHS3 Compliant

-

-

-
DCX53-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-243AA

4

130.492855mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2007

e3

yes

Discontinued

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

1W

DUAL

FLAT

260

-

40

DCX53

4

1

Single

-

COLLECTOR

SWITCHING

200MHz

PNP

PNP

80V

1A

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

200MHz

80V

100V

5V

63

1.5mm

4.5mm

2.48mm

No

ROHS3 Compliant

1W

-

DCX56-16-13 vs DCX53-13
DCX56-13

Diodes Incorporated

9 Weeks

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2007

e3

yes

Discontinued

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

Other Transistors

1W

DUAL

FLAT

260

-

40

DCX56

4

1

Single

-

COLLECTOR

SWITCHING

200MHz

NPN

NPN

80V

1A

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

200MHz

80V

100V

5V

63

1.5mm

4.5mm

2.48mm

No

ROHS3 Compliant

1W

-

DCX56-16-13 vs DCX56-13
DCX52-16-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Other Transistors

1W

-

FLAT

260

-

40

-

4

1

Single

-

COLLECTOR

SWITCHING

200MHz

PNP

PNP

60V

1A

100 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

60V

200MHz

60V

60V

5V

63

1.5mm

4.5mm

2.48mm

No

ROHS3 Compliant

1W

R-PSSO-F3

DCX56-16-13 vs DCX52-16-13