Diodes Incorporated DCX53-16-13
- Part Number:
- DCX53-16-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846106-DCX53-16-13
- Description:
- TRANS PNP 80V 1A SOT89-3
- Datasheet:
- DCX53-16-13
Diodes Incorporated DCX53-16-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DCX53-16-13.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDCX53
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1V
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)-5V
- Height1.5mm
- Length4.5mm
- Width2.48mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DCX53-16-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DCX53-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCX53-16-13 Applications
There are a lot of Diodes Incorporated
DCX53-16-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
DCX53-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCX53-16-13 Applications
There are a lot of Diodes Incorporated
DCX53-16-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DCX53-16-13 More Descriptions
Trans GP BJT PNP 80V 1A 4-Pin(3 Tab) SOT-89 T/R
PNP TRANSISTOR 80V 1A SOT89 RoHSconf
TRANS PNP 80V 1A SOT89-3
PNP TRANSISTOR 80V 1A SOT89 RoHSconf
TRANS PNP 80V 1A SOT89-3
The three parts on the right have similar specifications to DCX53-16-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatushFE MinPower - MaxJESD-30 CodeView Compare
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DCX53-16-1314 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJCut Tape (CT)2007e3yesDiscontinued1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors1WDUALFLAT260200MHz40DCX5341Single1WCOLLECTORSWITCHING200MHzPNPPNP80V1A100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V200MHz-1V80V100V-5V1.5mm4.5mm2.48mmNoROHS3 Compliant----
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9 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJCut Tape (CT)2007e3yesDiscontinued1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors1WDUALFLAT260200MHz40DCX5641Single1WCOLLECTORSWITCHING200MHzNPNNPN80V1A100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V200MHz-80V100V5V1.5mm4.5mm2.48mmNoROHS3 Compliant63--
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9 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJCut Tape (CT)2007e3yesDiscontinued1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors1WDUALFLAT260-40DCX5641Single-COLLECTORSWITCHING200MHzNPNNPN80V1A63 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V200MHz-80V100V5V1.5mm4.5mm2.48mmNoROHS3 Compliant631W-
-
14 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesNot For New Designs1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors1W-FLAT260-40-41Single-COLLECTORSWITCHING200MHzPNPPNP60V1A100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA60V200MHz-60V60V5V1.5mm4.5mm2.48mmNoROHS3 Compliant631WR-PSSO-F3
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