DCX53-16-13

Diodes Incorporated DCX53-16-13

Part Number:
DCX53-16-13
Manufacturer:
Diodes Incorporated
Ventron No:
2846106-DCX53-16-13
Description:
TRANS PNP 80V 1A SOT89-3
ECAD Model:
Datasheet:
DCX53-16-13

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Comments
Specifications
Diodes Incorporated DCX53-16-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DCX53-16-13.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Weight
    51.993025mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    200MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DCX53
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    -1V
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    -5V
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.48mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DCX53-16-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DCX53-16-13 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz


DCX53-16-13 Applications
There are a lot of Diodes Incorporated
DCX53-16-13 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
DCX53-16-13 More Descriptions
Trans GP BJT PNP 80V 1A 4-Pin(3 Tab) SOT-89 T/R
PNP TRANSISTOR 80V 1A SOT89 RoHSconf
TRANS PNP 80V 1A SOT89-3
Product Comparison
The three parts on the right have similar specifications to DCX53-16-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    hFE Min
    Power - Max
    JESD-30 Code
    View Compare
  • DCX53-16-13
    DCX53-16-13
    14 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2007
    e3
    yes
    Discontinued
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    DUAL
    FLAT
    260
    200MHz
    40
    DCX53
    4
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    200MHz
    PNP
    PNP
    80V
    1A
    100 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    80V
    200MHz
    -1V
    80V
    100V
    -5V
    1.5mm
    4.5mm
    2.48mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
  • DCX56-16-13
    9 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2007
    e3
    yes
    Discontinued
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    DUAL
    FLAT
    260
    200MHz
    40
    DCX56
    4
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    200MHz
    NPN
    NPN
    80V
    1A
    100 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    80V
    200MHz
    -
    80V
    100V
    5V
    1.5mm
    4.5mm
    2.48mm
    No
    ROHS3 Compliant
    63
    -
    -
  • DCX56-13
    9 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2007
    e3
    yes
    Discontinued
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    DUAL
    FLAT
    260
    -
    40
    DCX56
    4
    1
    Single
    -
    COLLECTOR
    SWITCHING
    200MHz
    NPN
    NPN
    80V
    1A
    63 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    80V
    200MHz
    -
    80V
    100V
    5V
    1.5mm
    4.5mm
    2.48mm
    No
    ROHS3 Compliant
    63
    1W
    -
  • DCX52-16-13
    14 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    1W
    -
    FLAT
    260
    -
    40
    -
    4
    1
    Single
    -
    COLLECTOR
    SWITCHING
    200MHz
    PNP
    PNP
    60V
    1A
    100 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    60V
    200MHz
    -
    60V
    60V
    5V
    1.5mm
    4.5mm
    2.48mm
    No
    ROHS3 Compliant
    63
    1W
    R-PSSO-F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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