ON Semiconductor D45VH10G

Name: D45VH10G
Brand: ON Semiconductor
SKU: 2463280-D45VH10G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: D45VH10G

Manufacturer:: ON Semiconductor

Ventron No:: 2463280-D45VH10G

Description:: TRANS PNP 80V 15A TO220AB

ECAD Model:

Datasheet:: D45VH10G

Specifications

ON Semiconductor D45VH10G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor D45VH10G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
83W
Peak Reflow Temperature (Cel)
260
Current Rating
-15A
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
83W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 1V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 800mA, 8A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
hFE Min
35
Height
15.75mm
Length
10.28mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

D45VH10G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 1V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1V @ 800mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -15A.In the part, the transition frequency is 50MHz.A maximum collector current of 15A volts can be achieved.

D45VH10G Features
the DC current gain for this device is 20 @ 4A 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 50MHz

D45VH10G Applications
There are a lot of ON Semiconductor
D45VH10G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

D45VH10G More Descriptions

ON Semi D45VH10G PNP Bipolar Transistor, 15 A, 80 V, 4-Pin TO-220AB | ON Semiconductor D45VH10G
Trans GP BJT PNP 80V 15A 83000mW 3-Pin(3 Tab) TO-220AB Tube
80V 83W 20@4A,1V 15A PNP TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 83W; DC Collector Current: -15A; DC Current Gain hFE: 35hFE; Transistor Case St
Bipolar Transistor, Pnp -80V To-220; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:15A; Power Dissipation:83W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhzrohs Compliant: Yes |Onsemi D45VH10G.
These complementary silicon power transistors are designed for high-speed switching applications such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.

Certification