Cypress Semiconductor Corp CY7S1061GE-10ZXIT

CY7S1061GE-10ZXIT Overview
The Moisture Sensitivity Level (MSL) for this particular product is classified as 3 (168 Hours), meaning that it can be exposed to a certain level of moisture for a maximum of 168 hours before it becomes susceptible to damage. The HTS Code for this product is 8542.32.00.41, which is used to classify the product for customs and trade purposes. The technology used in this product is SRAM - Synchronous, SDR, which is a type of memory that operates synchronously with the clock signal. The terminal position for this product is DUAL, indicating that it has two terminals. The Peak Reflow Temperature (Cel) for this product is NOT SPECIFIED, meaning that the specific temperature required for reflow is not specified. The terminal pitch for this product is 0.5mm, indicating the distance between the terminals. The memory size for this product is 16Mb 1M x 16, meaning it has a memory capacity of 16 megabits and is organized as 1 million words by 16 bits. The memory format is SRAM, indicating that it is a static random access memory. The memory interface for this product is parallel, meaning that data is transmitted in parallel. Lastly, the RoHS Status for this product is ROHS3 Compliant, meaning that it is compliant with the Restriction of Hazardous Substances Directive.

CY7S1061GE-10ZXIT Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)

CY7S1061GE-10ZXIT Applications
There are a lot of Cypress Semiconductor Corp CY7S1061GE-10ZXIT Memory applications.

supercomputers
Cache memory
multimedia computers
mainframes
workstations,
personal digital assistants
telecommunications
servers
hard disk drive (HDD)
eDRAM