Cypress Semiconductor Corp CY7S1041GE30-10BVXI
- Part Number:
- CY7S1041GE30-10BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7371041-CY7S1041GE30-10BVXI
- Description:
- Memory IC 8mm mm
- Datasheet:
- CY7S1041GE30-10BVXI
Cypress Semiconductor Corp CY7S1041GE30-10BVXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7S1041GE30-10BVXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-VFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Memory Density4194304 bit
- Access Time (Max)10 ns
- Length8mm
- Height Seated (Max)1mm
- Width6mm
- RoHS StatusROHS3 Compliant
CY7S1041GE30-10BVXI Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 48-VFBGA. Memory size on the chip is 4Mb 256K x 16. This device uses takes advantage of the SRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.2V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. An 48-pin package is used to package this memory device.
CY7S1041GE30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7S1041GE30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp
CY7S1041GE30-10BVXI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Tray size. The case is embedded in 48-VFBGA. Memory size on the chip is 4Mb 256K x 16. This device uses takes advantage of the SRAM format. The device's extended operating temperature range of -40°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.2V~3.6V. The recommended mounting type for this device is Surface Mount. On the chip, there are 48 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 3V is required for the operation of this memory device. An 48-pin package is used to package this memory device.
CY7S1041GE30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7S1041GE30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp
CY7S1041GE30-10BVXI Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
CY7S1041GE30-10BVXI More Descriptions
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 48-Pin VFBGA Tray
Asynchronous SRAM, 4096 Kb Density, 10 ns Speed, BGA-48, RoHSCypress Semiconductor SCT
IC SRAM 4MBIT PARALLEL 48VFBGA
Asynchronous SRAM, 4096 Kb Density, 10 ns Speed, BGA-48, RoHSCypress Semiconductor SCT
IC SRAM 4MBIT PARALLEL 48VFBGA
The three parts on the right have similar specifications to CY7S1041GE30-10BVXI.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)LengthHeight Seated (Max)WidthRoHS StatusPbfree CodePeak Reflow Temperature (Cel)Reflow Temperature-Max (s)JESD-30 CodeOperating ModeView Compare
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CY7S1041GE30-10BVXI13 WeeksSurface Mount48-VFBGAYES48-40°C~85°C TATray1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VBOTTOM13V0.75mm3.6V2.2V4Mb 256K x 16VolatileSRAMParallel256KX161610ns4194304 bit10 ns8mm1mm6mmROHS3 Compliant------
-
13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR4.5V~5.5VDUAL15V0.5mm5.5V4.5V16Mb 1M x 16VolatileSRAMParallel1MX161610ns16777216 bit10 ns18.4mm1.2mm12mmROHS3 CompliantyesNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G48ASYNCHRONOUS
-
13 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES--40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)543A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUAL13V0.8mm3.6V2.2V16Mb 1M x 16VolatileSRAMParallel1MX161610ns16777216 bit10 ns22.415mm1.2mm10.16mmROHS3 CompliantyesNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G54ASYNCHRONOUS
-
13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUAL13V0.5mm3.6V2.2V16Mb 1M x 16VolatileSRAMParallel1MX161610ns16777216 bit10 ns18.4mm1.2mm12mmROHS3 CompliantyesNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G48ASYNCHRONOUS
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