Cypress Semiconductor Corp CY7S1061GE30-10BVXI
- Part Number:
- CY7S1061GE30-10BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3722765-CY7S1061GE30-10BVXI
- Description:
- IC SRAM 16MBIT 10NS 48BGA
- Datasheet:
- CY7S1061GE30-10BVXI
Cypress Semiconductor Corp CY7S1061GE30-10BVXI technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7S1061GE30-10BVXI.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-VFBGA
- Surface MountYES
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply2.2V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.75mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 1M x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
CY7S1061GE30-10BVXI Overview
The specified package or case for this particular device is a 48-VFBGA, which stands for Very Fine Pitch Ball Grid Array. This indicates that the device has a high number of connections or pins in a compact design, allowing for more efficient use of space on a circuit board. The part status is listed as active, meaning that it is currently in production and available for purchase. The terminal position is located at the bottom of the package, making it easier to integrate into a circuit board design. The supply voltage for this device is 3V, with a maximum of 3.6V and a minimum of 2.2V. The organization of the device is 1MX16, meaning it has a capacity of 1 megabit with a width of 16 bits. The access time is listed as a maximum of 10 nanoseconds, indicating a fast response time. The width of the device is 6mm, making it a compact and versatile option for various electronic applications.
CY7S1061GE30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7S1061GE30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp CY7S1061GE30-10BVXI Memory applications.
eSRAM
main computer memory
telecommunications
cell phones
printers
mainframes
supercomputers
DVD disk buffer
nonvolatile BIOS memory
networks
The specified package or case for this particular device is a 48-VFBGA, which stands for Very Fine Pitch Ball Grid Array. This indicates that the device has a high number of connections or pins in a compact design, allowing for more efficient use of space on a circuit board. The part status is listed as active, meaning that it is currently in production and available for purchase. The terminal position is located at the bottom of the package, making it easier to integrate into a circuit board design. The supply voltage for this device is 3V, with a maximum of 3.6V and a minimum of 2.2V. The organization of the device is 1MX16, meaning it has a capacity of 1 megabit with a width of 16 bits. The access time is listed as a maximum of 10 nanoseconds, indicating a fast response time. The width of the device is 6mm, making it a compact and versatile option for various electronic applications.
CY7S1061GE30-10BVXI Features
Package / Case: 48-VFBGA
48 Pins
CY7S1061GE30-10BVXI Applications
There are a lot of Cypress Semiconductor Corp CY7S1061GE30-10BVXI Memory applications.
eSRAM
main computer memory
telecommunications
cell phones
printers
mainframes
supercomputers
DVD disk buffer
nonvolatile BIOS memory
networks
CY7S1061GE30-10BVXI More Descriptions
SRAM Chip Async Single 3V 16M-Bit 1M x 16 10ns 48-Pin VFBGA Tray
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, BGA-48, RoHSCypress Semiconductor SCT
2.2V~3.6V 16Mbit BGA-48 SRAM ROHS
IC SRAM 16MBIT PARALLEL 48VFBGA
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, BGA-48, RoHSCypress Semiconductor SCT
2.2V~3.6V 16Mbit BGA-48 SRAM ROHS
IC SRAM 16MBIT PARALLEL 48VFBGA
The three parts on the right have similar specifications to CY7S1061GE30-10BVXI.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Supply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusPbfree CodeJESD-30 CodeView Compare
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CY7S1061GE30-10BVXI13 WeeksSurface Mount48-VFBGAYES48-40°C~85°C TATray1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED3.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1mm8mm6mmROHS3 Compliant---
-
13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR4.5V~5.5VDUALNOT SPECIFIED15V0.5mmNOT SPECIFIED5.5V4.5V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm18.4mm12mmROHS3 CompliantyesR-PDSO-G48
-
8 WeeksSurface Mount36-BSOJ (0.400, 10.16mm Width)YES--40°C~85°C TATube2015Active3 (168 Hours)363A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIED3.6V2.2V4Mb 512K x 8Volatile-SRAMParallel512KX8810ns4194304 bit10 ns3.76mm23.495mm10.16mmROHS3 Compliant-R-PDSO-J36
-
13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES--40°C~85°C TATape & Reel (TR)1996Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIED3.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm18.4mm12mmROHS3 CompliantyesR-PDSO-G48
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