Cypress Semiconductor Corp CY7S1061G30-10ZXIT
- Part Number:
- CY7S1061G30-10ZXIT
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3722556-CY7S1061G30-10ZXIT
- Description:
- IC SRAM 16MBIT 10NS 48TSOP
- Datasheet:
- CY7S1061G30-10ZXIT
Cypress Semiconductor Corp CY7S1061G30-10ZXIT technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY7S1061G30-10ZXIT.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published1996
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.2.A
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, SDR
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G48
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size16Mb 1M x 16
- Memory TypeVolatile
- Operating ModeASYNCHRONOUS
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization1MX16
- Memory Width16
- Write Cycle Time - Word, Page10ns
- Memory Density16777216 bit
- Access Time (Max)10 ns
- Height Seated (Max)1.2mm
- Length18.4mm
- Width12mm
- RoHS StatusROHS3 Compliant
CY7S1061G30-10ZXIT Overview
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of Memory chip, classified under the Memory category. It can be mounted on the surface, and is also considered Pbfree (free of lead). Its HTS Code is 8542.32.00.41, which is the code used for classifying electronic components for import/export purposes. The maximum temperature for peak reflow is not specified. The required supply voltage is 3V, with a minimum of 2.2V. Its memory size is 16Mb, with a configuration of 1M x 16. It operates in asynchronous mode, and has a parallel memory interface. The write cycle time for each word or page is 10 nanoseconds.
CY7S1061G30-10ZXIT Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
CY7S1061G30-10ZXIT Applications
There are a lot of Cypress Semiconductor Corp CY7S1061G30-10ZXIT Memory applications.
graphics card
personal computers
multimedia computers
Camcorders
eSRAM
cell phones
supercomputers
networking
servers
mainframes
The manufacturer of this component is Cypress Semiconductor Corp. It is a type of Memory chip, classified under the Memory category. It can be mounted on the surface, and is also considered Pbfree (free of lead). Its HTS Code is 8542.32.00.41, which is the code used for classifying electronic components for import/export purposes. The maximum temperature for peak reflow is not specified. The required supply voltage is 3V, with a minimum of 2.2V. Its memory size is 16Mb, with a configuration of 1M x 16. It operates in asynchronous mode, and has a parallel memory interface. The write cycle time for each word or page is 10 nanoseconds.
CY7S1061G30-10ZXIT Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
CY7S1061G30-10ZXIT Applications
There are a lot of Cypress Semiconductor Corp CY7S1061G30-10ZXIT Memory applications.
graphics card
personal computers
multimedia computers
Camcorders
eSRAM
cell phones
supercomputers
networking
servers
mainframes
CY7S1061G30-10ZXIT More Descriptions
SRAM Chip Async Single 3V 16M-Bit 1M x 16 10ns 48-Pin TSOP-I T/R
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, SOP-48, RoHSCypress Semiconductor SCT
IC SRAM 16MBIT PARALLEL 48TSOP I
Asynchronous SRAM, 16384 Kb Density, 10 ns Speed, SOP-48, RoHSCypress Semiconductor SCT
IC SRAM 16MBIT PARALLEL 48TSOP I
The three parts on the right have similar specifications to CY7S1061G30-10ZXIT.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityAccess Time (Max)Height Seated (Max)LengthWidthRoHS StatusNumber of PinsView Compare
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CY7S1061G30-10ZXIT13 WeeksSurface Mount48-TFSOP (0.724, 18.40mm Width)YES-40°C~85°C TATape & Reel (TR)1996yesActive3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G483.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm18.4mm12mmROHS3 Compliant--
-
8 WeeksSurface Mount36-BSOJ (0.400, 10.16mm Width)YES-40°C~85°C TATube2015-Active3 (168 Hours)363A991.B.2.A8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIEDR-PDSO-J363.6V2.2V4Mb 512K x 8Volatile-SRAMParallel512KX8810ns4194304 bit10 ns3.76mm23.495mm10.16mmROHS3 Compliant-
-
13 WeeksSurface Mount48-VFBGAYES-40°C~85°C TATray1996-Active3 (168 Hours)483A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VBOTTOMNOT SPECIFIED13V0.75mmNOT SPECIFIED-3.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1mm8mm6mmROHS3 Compliant48
-
13 WeeksSurface Mount54-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATape & Reel (TR)1996yesActive3 (168 Hours)543A991.B.2.A8542.32.00.41SRAM - Synchronous, SDR2.2V~3.6VDUALNOT SPECIFIED13V0.8mmNOT SPECIFIEDR-PDSO-G543.6V2.2V16Mb 1M x 16VolatileASYNCHRONOUSSRAMParallel1MX161610ns16777216 bit10 ns1.2mm22.415mm10.16mmROHS3 Compliant-
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