STMicroelectronics BUXD87T4

Name: BUXD87T4
Brand: STMicroelectronics
SKU: 2463437-BUXD87T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUXD87T4

Manufacturer:: STMicroelectronics

Ventron No:: 2463437-BUXD87T4

Description:: TRANS NPN 450V 0.5A DPAK

ECAD Model:

Datasheet:: BUXD87T4

Specifications

STMicroelectronics BUXD87T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUXD87T4.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
20W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
20MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BUXD87
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Power Dissipation
20W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 40mA 5V
JEDEC-95 Code
TO-252AA
Vce Saturation (Max) @ Ib, Ic
1V @ 20mA, 200mA
Collector Emitter Breakdown Voltage
450V
Transition Frequency
20MHz
Max Breakdown Voltage
450V
Emitter Base Voltage (VEBO)
5V
hFE Min
12
VCEsat-Max
1 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUXD87T4 Overview
In this device, the DC current gain is 12 @ 40mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 20mA, 200mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 450V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

BUXD87T4 Features
the DC current gain for this device is 12 @ 40mA 5V
the vce saturation(Max) is 1V @ 20mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 20MHz

BUXD87T4 Applications
There are a lot of STMicroelectronics
BUXD87T4 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BUXD87T4 More Descriptions

Bipolar Transistors - BJT HIGH POWER NPN SILICON TRANSISTOR
Bipolar (Bjt) Single Transistor, Npn, 450 V, 20 Mhz, 20 W, 500 Ma, 50 |Stmicroelectronics BUXD87T4
Trans GP BJT NPN 450V 0.5A 20000mW 3-Pin(2 Tab) DPAK T/R
Power Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
TRANSISTOR, NPN, 450V, 1A, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency Typ ft:20MHz; Power Dissipation Pd:20W; DC Collector Current:500mA; DC Current Gain hFE:50; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:500mA; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1A; Current Ic @ Vce Sat:200mA; Current Ic Continuous a Max:500mA; Current Ic hFE:40mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:20MHz; Hfe Min:12; No. of Transistors:1; Package / Case:D-PAK; Power Dissipation Pd:20W; Power Dissipation Ptot Max:20W; Termination Type:SMD

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