STMicroelectronics BULT106D

Name: BULT106D
Brand: STMicroelectronics
SKU: 3585284-BULT106D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BULT106D

Manufacturer:: STMicroelectronics

Ventron No:: 3585284-BULT106D

Description:: TRANS NPN 230V 2A SOT-32

ECAD Model:

Datasheet:: BULT106D

Specifications

STMicroelectronics BULT106D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BULT106D.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
32W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BULT106
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power - Max
32W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 400mA, 2A
Collector Emitter Breakdown Voltage
230V
Emitter Base Voltage (VEBO)
9V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BULT106D Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 2A volts.

BULT106D Features
the DC current gain for this device is 10 @ 1A 5V
the vce saturation(Max) is 1.2V @ 400mA, 2A
the emitter base voltage is kept at 9V

BULT106D Applications
There are a lot of STMicroelectronics
BULT106D applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BULT106D More Descriptions

Power Bipolar Transistor, 2A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
High voltage fast-switching NPN power transistor
Trans GP BJT NPN 230V 2A 3-Pin(3 Tab) SOT-32 Tube

Certification