ON Semiconductor BUL45G

Name: BUL45G
Brand: ON Semiconductor
SKU: 2466091-BUL45G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUL45G

Manufacturer:: ON Semiconductor

Ventron No:: 2466091-BUL45G

Description:: TRANS NPN 400V 5A TO220AB

ECAD Model:

Datasheet:: BUL45G

Specifications

ON Semiconductor BUL45G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BUL45G.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
SWITCHMODE™
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
260
Current Rating
5A
Frequency
12MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BUL45
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
12MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 300mA 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
400mV @ 400mA, 2A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
12MHz
Collector Emitter Saturation Voltage
890mV
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
14
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BUL45G Overview
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 890mV.A VCE saturation (Max) of 400mV @ 400mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 12MHz.A maximum collector current of 5A volts is possible.

BUL45G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz

BUL45G Applications
There are a lot of ON Semiconductor
BUL45G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BUL45G More Descriptions

5.0 A, 400 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 400V, TO-220; T; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V;
Trans GP BJT NPN 400V 5A 3-Pin(3 Tab) TO-220AB Rail
High Voltage SWITCHMODE Series Designed for use in electronic ballast (light ballast) and in Switchmode P supplies up to 50 Watts.
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Collector Emitter Saturation Voltage, Vce(sat):14V; Power Dissipation, Pd:75W; DC Current Gain Min (hfe):14; Package/Case:3-TO-220 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BUL45G.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Surface Mount

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
BUL45G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

SWITCHMODE™

2006

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

400V

75W

260

5A

12MHz

40

BUL45

3

1

Single

75W

COLLECTOR

SWITCHING

12MHz

NPN

NPN

400V

5A

14 @ 300mA 5V

100μA

TO-220AB

400mV @ 400mA, 2A

400V

12MHz

890mV

700V

9V

14

6.35mm

6.35mm

6.35mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
BUL49DFP

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

SILICON

150°C TJ

Tube

-

-

e3

yes

Obsolete

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

-

Other Transistors

-

80W

-

-

-

-

BUL49

3

1

Single

-

ISOLATED

SWITCHING

-

NPN

NPN

450V

5A

4 @ 7A 10V

100μA

TO-220AB

1.2V @ 800mA, 4A

450V

-

-

-

10V

10

-

-

-

-

No

ROHS3 Compliant

-

34W

-

-

-

-

-

-

-

-

-

BUL45G vs BUL49DFP
BUL44G

ON Semiconductor

-

-

Through Hole

TO-220-3

-

-

SILICON

-65°C~150°C TJ

Tube

SWITCHMODE™

-

e3

yes

Obsolete

1 (Unlimited)

3

-

MATTE TIN

LEADFORM OPTIONS ARE AVAILABLE

-

-

-

260

-

-

40

-

3

1

-

-

COLLECTOR

SWITCHING

-

NPN

NPN

-

-

14 @ 200mA 5V

100μA

TO-220AB

600mV @ 200mA, 1A

-

13MHz

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

50W

NO

SINGLE

unknown

R-PSFM-T3

COMMERCIAL

SINGLE

400V

2A

13MHz

BUL45G vs BUL44G
BUL45D2

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 weeks ago)

-

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

-

2006

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

BUILT-IN ANTISATURATION NETWORK

Other Transistors

700V

75W

240

5A

-

30

BUL45

3

1

Single

-

COLLECTOR

SWITCHING

13MHz

NPN

NPN

500mV

5A

10 @ 2A 1V

100μA

-

500mV @ 400mA, 2A

400V

13MHz

460mV

700V

12V

22

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

NO

-

not_compliant

-

Not Qualified

-

-

-

-

BUL45G vs BUL45D2