ON Semiconductor BUL45
- Part Number:
- BUL45
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069194-BUL45
- Description:
- TRANS NPN 400V 5A TO220AB
- Datasheet:
- BUL45
ON Semiconductor BUL45 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BUL45.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesSWITCHMODE™
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating5A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBUL45
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product12MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 300mA 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic400mV @ 400mA, 2A
- Collector Emitter Breakdown Voltage400V
- Max Frequency12MHz
- Transition Frequency12MHz
- Collector Emitter Saturation Voltage890mV
- Collector Base Voltage (VCBO)700V
- Emitter Base Voltage (VEBO)9V
- hFE Min14
- Height9.28mm
- Length10.28mm
- Width4.82mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BUL45 Overview
DC current gain in this device equals 14 @ 300mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 890mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 400mA, 2A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 12MHz.In extreme cases, the collector current can be as low as 5A volts.
BUL45 Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz
BUL45 Applications
There are a lot of ON Semiconductor
BUL45 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 14 @ 300mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 890mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 400mA, 2A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.As a result, the part has a transition frequency of 12MHz.In extreme cases, the collector current can be as low as 5A volts.
BUL45 Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz
BUL45 Applications
There are a lot of ON Semiconductor
BUL45 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL45 More Descriptions
5.0 A, 400 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 400V 5A TO220AB
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 400V 5A TO220AB
The three parts on the right have similar specifications to BUL45.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRoHS StatusLead FreeCoil PowerSurface MountWeightFrequencyREACH SVHCRadiation HardeningView Compare
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BUL45LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJTubeSWITCHMODE™2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEOther Transistors400V75W240not_compliant5A30BUL453Not Qualified1Single75WCOLLECTORSWITCHING12MHzNPNNPN400V5A14 @ 300mA 5V100μATO-220AB400mV @ 400mA, 2A400V12MHz12MHz890mV700V9V149.28mm10.28mm4.82mmNon-RoHS CompliantContains Lead-------
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LAST SHIPMENTS (Last Updated: 3 days ago)Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJTubeSWITCHMODE™2009e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEOther Transistors400V50W240not_compliant2A30-3Not Qualified1Single-COLLECTORSWITCHING13MHzNPNNPN600mV2A14 @ 200mA 5V100μATO-220AB600mV @ 200mA, 1A400V-13MHz920mV700V9V7---Non-RoHS CompliantContains Lead1.6W-----
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LAST SHIPMENTS (Last Updated: 2 weeks ago)-Through HoleTO-220-33SILICON-65°C~150°C TJTube-2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)BUILT-IN ANTISATURATION NETWORKOther Transistors700V75W240not_compliant5A30BUL453Not Qualified1Single-COLLECTORSWITCHING13MHzNPNNPN500mV5A10 @ 2A 1V100μA-500mV @ 400mA, 2A400V-13MHz460mV700V12V22---Non-RoHS CompliantContains Lead-NO----
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LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJTubeSWITCHMODE™2006e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)LEADFORM OPTIONS ARE AVAILABLEOther Transistors400V75W260-5A40BUL453-1Single75WCOLLECTORSWITCHING12MHzNPNNPN400V5A14 @ 300mA 5V100μATO-220AB400mV @ 400mA, 2A400V-12MHz890mV700V9V146.35mm6.35mm6.35mmRoHS CompliantLead Free--4.535924g12MHzNo SVHCNo
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