Diodes Incorporated BST16TA
- Part Number:
- BST16TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2468548-BST16TA
- Description:
- TRANS PNP 300V 0.5A SOT-89
- Datasheet:
- BST16
Diodes Incorporated BST16TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BST16TA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.95
- Voltage - Rated DC-300V
- Max Power Dissipation1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBST16
- JESD-30 CodeR-PSSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max1W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product15MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA 10V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency15MHz
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)-350V
- Emitter Base Voltage (VEBO)-4V
- Continuous Collector Current-500mA
- Height1.6mm
- Length4.6mm
- Width2.6mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
BST16TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of -4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 15MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BST16TA Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 15MHz
BST16TA Applications
There are a lot of Diodes Incorporated
BST16TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.When VCE saturation is 2V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of -4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 15MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BST16TA Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 15MHz
BST16TA Applications
There are a lot of Diodes Incorporated
BST16TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BST16TA More Descriptions
TRANS PNP 300V 0.5A SOT-89
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