BST16,115

NXP USA Inc. BST16,115

Part Number:
BST16,115
Manufacturer:
NXP USA Inc.
Ventron No:
2468529-BST16,115
Description:
TRANS PNP 300V 0.2A SOT89
ECAD Model:
Datasheet:
BST15(16)

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Specifications
NXP USA Inc. BST16,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BST16,115.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1998
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Subcategory
    Other Transistors
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BST16
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-F3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    1.3W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 50mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    750mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    300V
  • Current - Collector (Ic) (Max)
    200mA
  • Transition Frequency
    15MHz
  • Frequency - Transition
    15MHz
  • Power Dissipation-Max (Abs)
    1W
  • RoHS Status
    ROHS3 Compliant
Description
BST16,115 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 15MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.

BST16,115 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
a transition frequency of 15MHz


BST16,115 Applications
There are a lot of NXP USA Inc.
BST16,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BST16,115 More Descriptions
0.2 A 300 V PNP Si Power Transistor
TRANS PNP 300V 0.2A SOT89
Motor / Motion / Ignition Controllers & Drivers
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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