Fairchild/ON Semiconductor BSR17A
- Part Number:
- BSR17A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068910-BSR17A
- Description:
- TRANS NPN 40V 0.2A SOT-23
- Datasheet:
- BSR17A
Fairchild/ON Semiconductor BSR17A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BSR17A.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time39 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating200mA
- Frequency300MHz
- Base Part NumberBSR17
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Turn On Delay Time70 ns
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Turn-Off Delay Time250 ns
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Current - Collector Cutoff (Max)5μA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- Height930μm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSR17A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
BSR17A Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
BSR17A Applications
There are a lot of ON Semiconductor
BSR17A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
BSR17A Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
BSR17A Applications
There are a lot of ON Semiconductor
BSR17A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BSR17A More Descriptions
Bipolar Transistors - BJT NPN Transistor General Purpose
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:0.2A; Package/Case:3-SOT-23; Termination Type:SMD; Collector Base Voltage:60V
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BSR17A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:300mW; SMD Marking:U92; Tape Width:8mm; Termination Type:SMD; Turn Off Time:250ns; Turn On Time:70ns; Voltage Vcbo:60V
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:0.2A; Package/Case:3-SOT-23; Termination Type:SMD; Collector Base Voltage:60V
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BSR17A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:300mW; SMD Marking:U92; Tape Width:8mm; Termination Type:SMD; Turn Off Time:250ns; Turn On Time:70ns; Voltage Vcbo:60V
The three parts on the right have similar specifications to BSR17A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountSeriesTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionTurn Off Time-Max (toff)Supplier Device PackageTerminationTurn On Time-Max (ton)View Compare
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BSR17AACTIVE (Last Updated: 3 days ago)39 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2004e3yesActive1 (Unlimited)3EAR99Other Transistors40V350mWDUALGULL WING200mA300MHzBSR171Single350mW70 nsSWITCHING300MHzNPNNPN250 ns40V200mA100 @ 10mA 1V5μA ICBO300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100930μm2.92mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------------
-
-4 Weeks--Surface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJTape & Reel (TR)1996e3-Active1 (Unlimited)3EAR99---DUALGULL WING--BSR141---SWITCHING-NPNNPN---100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz----------ROHS3 Compliant-YESAutomotive, AEC-Q101Tin (Sn)8541.21.00.75NOT SPECIFIEDNOT SPECIFIED3Not QualifiedSINGLE250mW40V800mA300MHz250ns---
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----Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------BSR17-------NPN---100 @ 10mA 1V5μA ICBO300mV @ 5mA, 50mA-----------------------350mW40V200mA300MHz-SOT-23-3--
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ACTIVE (Last Updated: 3 days ago)39 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)3EAR99Other Transistors-60V350mWDUALGULL WING-800mA200MHzBSR161Single350mW-SWITCHING200MHzPNPPNP-60V800mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V-5V100930μm2.92mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------------SMD/SMT45ns
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