Fairchild/ON Semiconductor BSR14
- Part Number:
- BSR14
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585294-BSR14
- Description:
- TRANS NPN 40V 0.8A SOT23
- Datasheet:
- BSR14
Fairchild/ON Semiconductor BSR14 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BSR14.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time39 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating800mA
- Frequency300MHz
- Base Part NumberBSR14
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- hFE Min35
- Max Junction Temperature (Tj)150°C
- Turn Off Time-Max (toff)285ns
- Height1.2mm
- Length2.92mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSR14 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.
BSR14 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 800mA
a transition frequency of 300MHz
BSR14 Applications
There are a lot of ON Semiconductor
BSR14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BSR14 More Descriptions
Trans GP BJT NPN 40V 0.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R / TRANS NPN 40V 0.8A SOT23
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 350mW 800mA 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 300; No. of Pins: 3
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Trans GP BJT NPN 40V 0.8A 350mW 3-Pin SOT-23 T/R / TRANS NPN 40V 0.8A SOT23
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
40V 350mW 800mA 100@150mA10V 300MHz 1V@500mA50mA NPN -55¡Í~ 150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
TRANSISTOR, FULL REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 300; No. of Pins: 3
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 800 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 350 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to BSR14.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Turn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountSeriesTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationFrequency - TransitionJESD-30 CodePolarityTurn On Time-Max (ton)View Compare
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BSR14ACTIVE (Last Updated: 3 days ago)39 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3SMD/SMTEAR99Other Transistors40V350mWDUALGULL WING800mA300MHzBSR141Single350mWSWITCHING300MHzNPNNPN40V800mA100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA40V300MHz1V40V75V6V35150°C285ns1.2mm2.92mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------------
-
----Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------BSR18------PNP--110 @ 10mA 1V50nA ICBO400mV @ 5mA, 50mA----------------SOT-23-3230mW40V200mA-------------
-
-4 Weeks--Surface MountTO-236-3, SC-59, SOT-23-33-SILICON150°C TJTape & Reel (TR)1996e3-Active1 (Unlimited)3-EAR99---DUALGULL WING--BSR141--SWITCHING-NPNNPN--100 @ 150mA 10V10nA ICBO1V @ 50mA, 500mA-300MHz------250ns-----ROHS3 Compliant--250mW40V800mAYESAutomotive, AEC-Q101Tin (Sn)8541.21.00.75NOT SPECIFIEDNOT SPECIFIED3Not QualifiedSINGLE300MHz---
-
-4 Weeks--Surface MountTO-236-3, SC-59, SOT-23-36-SILICON150°C TJTape & Reel (TR)2009e3-Active1 (Unlimited)3-EAR99---DUALGULL WING--BSR161--SWITCHING--PNP--100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-200MHz------------ROHS3 Compliant--250mW60V600mAYESAutomotive, AEC-Q101Tin (Sn)8541.21.00.75260303Not QualifiedSINGLE200MHzR-PDSO-G3PNP, NPN40ns
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