ON Semiconductor BSP52T1
- Part Number:
- BSP52T1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069166-BSP52T1
- Description:
- TRANS NPN DARL 80V 1A SOT223
- Datasheet:
- BSP52T1
ON Semiconductor BSP52T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BSP52T1.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Package / CaseSOT-223-4
- Surface MountYES
- Number of Pins4
- PackagingCut Tape (CT)
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn80Pb20)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation800mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating1A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation800mW
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)1.3V
- Max Collector Current1A
- JEDEC-95 CodeTO-261AA
- Collector Emitter Breakdown Voltage80V
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)90V
- Emitter Base Voltage (VEBO)5V
- DC Current Gain-Min (hFE)2000
- Continuous Collector Current1A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSP52T1 Overview
Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSP52T1 Features
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BSP52T1 Applications
There are a lot of ON Semiconductor
BSP52T1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSP52T1 Features
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BSP52T1 Applications
There are a lot of ON Semiconductor
BSP52T1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BSP52T1 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
NPN Bipolar Darlington Transistor
TRANS NPN DARL 80V 1A SOT223
SS SOT223 DL XSTR NPN 80V
OEMs, CMs ONLY (NO BROKERS)
NPN Bipolar Darlington Transistor
TRANS NPN DARL 80V 1A SOT223
SS SOT223 DL XSTR NPN 80V
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to BSP52T1.
-
ImagePart NumberManufacturerLifecycle StatusPackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)DC Current Gain-Min (hFE)Continuous Collector CurrentRoHS StatusLead FreeFactory Lead TimeMountMounting TypeTransistor Element MaterialOperating TemperatureBase Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionhFE MinHeightLengthWidthRadiation HardeningContact PlatingWeightREACH SVHCSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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BSP52T1LAST SHIPMENTS (Last Updated: 1 day ago)SOT-223-4YES4Cut Tape (CT)1997e0noObsolete1 (Unlimited)4EAR99Tin/Lead (Sn80Pb20)150°C-65°COther Transistors80V800mWDUALGULL WINGNOT SPECIFIEDnot_compliant1ANOT SPECIFIED4Not Qualified1NPNSingle800mWCOLLECTORSWITCHING1.3V1ATO-261AA80V80V90V5V20001ANon-RoHS CompliantContains Lead--------------------------
-
-TO-261-4, TO-261AA-4Tape & Reel (TR)2008--Obsolete1 (Unlimited)4EAR99-----1.5WDUALGULL WING------1NPNSingle-COLLECTORSWITCHING1.3V1A-60V-80V5V--ROHS3 Compliant-26 WeeksSurface MountSurface MountSILICON150°C TJBSP511.5WNPN - Darlington2000 @ 500mA 10V10μA1.8V @ 1mA, 1A200MHz1.8V200MHz10001.6mm6.5mm3.5mmNo------
-
ACTIVE (Last Updated: 3 days ago)TO-261-4, TO-261AA-4Tape & Reel (TR)1997e3yesActive1 (Unlimited)4EAR99---Other Transistors45V1WDUALGULL WING--800mA---1NPNSingle---45V800mA-45V45V60V5V--ROHS3 CompliantLead Free39 WeeksSurface MountSurface MountSILICON-55°C~150°C TJBSP50-NPN - Darlington2000 @ 500mA 10V50nA1.3V @ 500μA, 500mA200MHz1.3V-20001.6mm6.5mm3.5mmNoTin188mgNo SVHC---
-
-TO-261-4, TO-261AA--Tape & Reel (TR)---Obsolete1 (Unlimited)-------------------------------ROHS3 Compliant---Surface Mount-150°C TJ-1.5WNPN - Darlington2000 @ 500mA 10V10μA1.8V @ 1mA, 1A--200MHz--------PG-SOT223-445V1A
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