NXP USA Inc. BLP8G10S-45PJ

Name: BLP8G10S-45PJ
Brand: NXP USA Inc.
SKU: 3069864-BLP8G10S-45PJ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BLP8G10S-45PJ

Manufacturer:: NXP USA Inc.

Ventron No:: 3069864-BLP8G10S-45PJ

Description:: TRANS LDMOS 45W 4HSOPF

ECAD Model:

Datasheet:: BLP8G10S-45PJ

Specifications

NXP USA Inc. BLP8G10S-45PJ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BLP8G10S-45PJ.

Package / Case
SOT-1223-1
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
65V
Frequency
952.5MHz~957.5MHz
Base Part Number
BLP8G10
Current - Test
224mA
Transistor Type
LDMOS (Dual)
Gain
20.8dB
Power - Output
2.5W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

BLP8G10S-45PJ Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLP8G10S-45PJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLP8G10S-45PJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BLP8G10S-45PJ More Descriptions

IC MTR DRV BIPLR 2.7-5.5V 24SSOP
RF MOSFET LDMOS 28V 4HSOPF
TRANS LDMOS 45W 4HSOPF

Product Comparison

The three parts on the right have similar specifications to BLP8G10S-45PJ.

Image

Part Number

Manufacturer

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated

Frequency

Base Part Number

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Factory Lead Time

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

View Compare
BLP8G10S-45PJ

NXP USA Inc.

SOT-1223-1

Tape & Reel (TR)

2006

Active

3 (168 Hours)

65V

952.5MHz~957.5MHz

BLP8G10

224mA

LDMOS (Dual)

20.8dB

2.5W

28V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BLP8G05S-200Y

Ampleon USA Inc.

SOT-1138-2

Tape & Reel (TR)

2010

Active

3 (168 Hours)

65V

440MHz

-

2mA

LDMOS (Dual), Common Source

21dB

210W

28V

-

13 Weeks

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BLP8G10S-45PJ vs BLP8G05S-200Y
BLP8G10S-45PY

Ampleon USA Inc.

SOT-1223-1

Tape & Reel (TR)

2006

Active

3 (168 Hours)

65V

952.5MHz~957.5MHz

BLP8G10

224mA

LDMOS (Dual), Common Source

20.8dB

2.5W

28V

ROHS3 Compliant

13 Weeks

YES

SILICON

4

EAR99

FLAT

NOT SPECIFIED

unknown

NOT SPECIFIED

IEC-60134

R-PDFP-F4

2

COMMON SOURCE, 2 ELEMENTS

ENHANCEMENT MODE

AMPLIFIER

N-CHANNEL

65V

METAL-OXIDE SEMICONDUCTOR

BLP8G10S-45PJ vs BLP8G10S-45PY
BLP8G10S-45PGY

Ampleon USA Inc.

4-BESOP (0.173, 4.40mm Width)

Tape & Reel (TR)

2006

Active

3 (168 Hours)

65V

952.5MHz~957.5MHz

BLP8G10

224mA

LDMOS (Dual), Common Source

20.8dB

2.5W

28V

ROHS3 Compliant

13 Weeks

YES

SILICON

4

EAR99

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

IEC-60134

R-PDSO-G4

2

COMMON SOURCE, 2 ELEMENTS

ENHANCEMENT MODE

AMPLIFIER

N-CHANNEL

65V

METAL-OXIDE SEMICONDUCTOR

BLP8G10S-45PJ vs BLP8G10S-45PGY