NXP USA Inc. BLP8G10S-45PGJ

Name: BLP8G10S-45PGJ
Brand: NXP USA Inc.
SKU: 2848166-BLP8G10S-45PGJ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BLP8G10S-45PGJ

Manufacturer:: NXP USA Inc.

Ventron No:: 2848166-BLP8G10S-45PGJ

Description:: TRANS LDMOS 45W 4HSOP

ECAD Model:

Datasheet:: BLP8G10S-45PGJ

Specifications

NXP USA Inc. BLP8G10S-45PGJ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BLP8G10S-45PGJ.

Package / Case
SOT-1223-1
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
28V
Frequency
700MHz~1GHz
Base Part Number
BLP8G10
Transistor Type
LDMOS
Gain
21dB
Power - Output
45W
RoHS Status
ROHS3 Compliant

Description

BLP8G10S-45PGJ Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet BLP8G10S-45PGJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BLP8G10S-45PGJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BLP8G10S-45PGJ More Descriptions

Stepping Motor Driver 44-Pin SSOP-J EP T/R
RF MOSFET LDMOS 4HSOPF
TRANS LDMOS 45W 4HSOP

Product Comparison

The three parts on the right have similar specifications to BLP8G10S-45PGJ.

Image

Part Number

Manufacturer

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Voltage - Rated

Frequency

Base Part Number

Transistor Type

Gain

Power - Output

RoHS Status

Factory Lead Time

Current - Test

Voltage - Test

Supplier Device Package

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

DS Breakdown Voltage-Min

FET Technology

View Compare
BLP8G10S-45PGJ

NXP USA Inc.

SOT-1223-1

Tape & Reel (TR)

2006

Active

3 (168 Hours)

28V

700MHz~1GHz

BLP8G10

LDMOS

21dB

45W

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BLP8G05S-200Y

Ampleon USA Inc.

SOT-1138-2

Tape & Reel (TR)

2010

Active

3 (168 Hours)

65V

440MHz

-

LDMOS (Dual), Common Source

21dB

210W

-

13 Weeks

2mA

28V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BLP8G10S-45PGJ vs BLP8G05S-200Y
BLP8G10S-270PWY

Ampleon USA Inc.

SOT-1221-2

Cut Tape (CT)

2011

Active

3 (168 Hours)

65V

718.5MHz~765.5MHz

-

LDMOS (Dual), Common Source

20dB

56W

ROHS3 Compliant

13 Weeks

2A

28V

6-HSOPF

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BLP8G10S-45PGJ vs BLP8G10S-270PWY
BLP8G10S-45PGY

Ampleon USA Inc.

4-BESOP (0.173, 4.40mm Width)

Tape & Reel (TR)

2006

Active

3 (168 Hours)

65V

952.5MHz~957.5MHz

BLP8G10

LDMOS (Dual), Common Source

20.8dB

2.5W

ROHS3 Compliant

13 Weeks

224mA

28V

-

YES

SILICON

4

EAR99

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

IEC-60134

R-PDSO-G4

2

COMMON SOURCE, 2 ELEMENTS

ENHANCEMENT MODE

AMPLIFIER

N-CHANNEL

65V

METAL-OXIDE SEMICONDUCTOR

BLP8G10S-45PGJ vs BLP8G10S-45PGY