Ampleon USA Inc. BLF574XR,112

Name: BLF574XR,112
Brand: Ampleon USA Inc.
SKU: 2474797-BLF574XR,112
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BLF574XR,112

Manufacturer:: Ampleon USA Inc.

Ventron No:: 2474797-BLF574XR,112

Description:: RF FET LDMOS 110V 23DB SOT1214A

ECAD Model:

Datasheet:: BLF574XR,112

Specifications

Ampleon USA Inc. BLF574XR,112 technical specifications, attributes, parameters and parts with similar specifications to Ampleon USA Inc. BLF574XR,112.

Factory Lead Time
13 Weeks
Package / Case
SOT-1214A
Supplier Device Package
SOT1214A
Packaging
Tray
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated
110V
Frequency
225MHz
Current - Test
100mA
Transistor Type
LDMOS (Dual), Common Source
Gain
23.5dB
Power - Output
600W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant

Description

Description:
Ampleon Transistors - FETs, MOSFETs - RF BLF574XR,112 is a RF FET LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) transistor with a drain-source voltage of 110V and a gain of 23dB. It is packaged in a SOT1214A package.

Features:
• High gain of 23dB
• High drain-source voltage of 110V
• Low thermal resistance
• Low gate charge
• Low gate-source capacitance
• Low input capacitance
• Low output capacitance
• High power handling capability
• High frequency operation
• High efficiency
• Low noise

Applications:
Ampleon Transistors - FETs, MOSFETs - RF BLF574XR,112 is suitable for use in a wide range of RF applications such as amplifiers, oscillators, mixers, modulators, and switches. It is also suitable for use in high power, high frequency, and high efficiency applications.

BLF574XR,112 More Descriptions

RF Power Transistor, 5 to 230 MHz, 500 W, 26.5 dB, 50 V, LDMOS, Ruggedized, SOT1214A
RF Mosfet LDMOS (Dual), Common Source 50V 100mA 225MHz 23.5dB 600W SOT1214A
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Certification