Nexperia USA Inc. BF820W,115
- Part Number:
- BF820W,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2845492-BF820W,115
- Description:
- TRANS NPN 300V 0.05A SOT323
- Datasheet:
- BF820W,115
Nexperia USA Inc. BF820W,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BF820W,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency60MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBF820
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Gain Bandwidth Product60MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA 20V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 30mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency60MHz
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- VCEsat-Max0.6 V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BF820W,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 25mA 20V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 30mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 50mA volts.
BF820W,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,115 Applications
There are a lot of Nexperia USA Inc.
BF820W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BF820W,115 More Descriptions
Trans, Bipolar, Npn, 300V, 0.05A, Sc-70 Rohs Compliant: Yes |Nexperia BF820W,115
BF820 Series 300 V 200 mA 100 mA SMT NPN High Voltage Transistor - SOT-323
Transistor, BIPOLAR, NPN, 300V, 0.05A, SC-70;
Trans GP BJT NPN 300V 0.05A 200mW Automotive 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BF820W - NPN high voltage transistor
BF820 Series 300 V 200 mA 100 mA SMT NPN High Voltage Transistor - SOT-323
Transistor, BIPOLAR, NPN, 300V, 0.05A, SC-70;
Trans GP BJT NPN 300V 0.05A 200mW Automotive 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BF820W - NPN high voltage transistor
The three parts on the right have similar specifications to BF820W,115.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)VCEsat-MaxRadiation HardeningRoHS StatusLead FreehFE MinTerminal FinishView Compare
-
BF820W,1154 WeeksTinSurface MountSurface MountSC-70, SOT-3233SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99200mWDUALGULL WING26060MHz40BF82031Single200mW60MHzNPNNPN300V50mA50 @ 25mA 20V10nA ICBO600mV @ 5mA, 30mA300V60MHz300V300V5V0.6 VNoROHS3 CompliantLead Free---
-
4 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99250mWDUALGULL WING260450MHz40BF82431Single250mW450MHzPNPPNP30V25mA25 @ 4mA 10V50nA ICBO-30V450MHz30V30V4V-NoROHS3 CompliantLead Free25-
-
4 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99250mWDUALGULL WING26060MHz40BF82131Single250mW60MHzPNPPNP300V50mA50 @ 25mA 20V10nA ICBO800mV @ 5mA, 30mA300V60MHz300V300V5V0.8 VNoROHS3 Compliant---
-
4 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e3Active1 (Unlimited)3EAR99250mWDUALGULL WING26060MHz40BF82331Single250mW60MHzPNPPNP250V50mA50 @ 25mA 20V10nA ICBO800mV @ 5mA, 30mA250V60MHz250V250V5V0.8 VNoROHS3 CompliantLead Free-Tin (Sn)
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
02 January 2024
ADE7953ACPZ Price, Advantages and Disadvantages, Application Fields and More
Ⅰ. ADE7953ACPZ descriptionⅡ. Technical parameters of ADE7953ACPZⅢ. Price and inventory of ADE7953ACPZⅣ. What are the advantages and disadvantages of ADE7953ACPZ?Ⅴ. Circuit diagram of ADE7953ACPZⅥ. How does ADE7953ACPZ achieve... -
03 January 2024
Application Guide for LL4148 Small Signal Diode
Ⅰ. Overview of LL4148Ⅱ. Working principle of LL4148 diodeⅢ. Technical parameters of LL4148 diodeⅣ. Electrical characteristics of LL4148 diodeⅤ. Where is LL4148 diode used?Ⅵ. What is the difference between LL4148... -
03 January 2024
Exploring the 2SK2225 Transistor's Capabilities
Ⅰ. Introduction to 2SK2225Ⅱ. Specifications of 2SK2225Ⅲ. The manufacturer of 2SK2225Ⅳ. Absolute maximum ratings of 2SK2225Ⅴ. How to use 2SK2225?Ⅵ. Where is 2SK2225 used?Ⅶ. How to improve the... -
04 January 2024
ULN2003ADR: A Powerful Chip that Drives High Current Loads
Ⅰ. ULN2003ADR descriptionⅡ. Symbol, footprint and pin configuration of ULN2003ADRⅢ. Specifications of ULN2003ADRⅣ. What are the application fields of ULN2003ADR?Ⅴ. Simplified block diagram of ULN2003ADRⅥ. How to correctly...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.