ON Semiconductor BDV65BG

Name: BDV65BG
Brand: ON Semiconductor
SKU: 2465472-BDV65BG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDV65BG

Manufacturer:: ON Semiconductor

Ventron No:: 2465472-BDV65BG

Description:: TRANS NPN DARL 100V 10A TO247

ECAD Model:

Datasheet:: BDV65BG

Specifications

ON Semiconductor BDV65BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BDV65BG.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
125W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
125W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BDV65BG Overview
This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.

BDV65BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A

BDV65BG Applications
There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BDV65BG More Descriptions

10 A, 100 V NPN Darlington Bipolar Power Transistor
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 10A 125000mW 3-Pin(3 Tab) TO-247 Tube
BDV Series 100 V 10 A Complementary Silicon Power Darlington Transistor - TO-247
DARLINGTON TRANSISTOR, TO-247; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: 10A; DC Cu; Available until stocks are exhausted
Darlington Transistor, Npn, 100V, To-247; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:10A; Power Dissipation Pd:125W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 100 / Power Dissipation (Pd) W = 125 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2 / Reflow Temperature Max. °C = 260

Product Comparison

The three parts on the right have similar specifications to BDV65BG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Transition Frequency

Mount

HTS Code

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Polarity/Channel Type

Current - Collector (Ic) (Max)

Frequency - Transition

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Base Part Number

Power - Max

Voltage - Collector Emitter Breakdown (Max)

View Compare
BDV65BG

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Tin

Through Hole

TO-247-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

125W

260

10A

40

3

1

NPN

Single

125W

COLLECTOR

AMPLIFIER

NPN - Darlington

100V

10A

1000 @ 5A 4V

1mA

2V @ 20mA, 5A

100V

2V

100V

5V

1000

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDV64BG

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

2 Weeks

-

Through Hole

TO-247-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-100V

125W

260

-10A

40

3

1

PNP

Single

125W

COLLECTOR

AMPLIFIER

PNP - Darlington

100V

10A

1000 @ 5A 4V

1mA

2V @ 20mA, 5A

100V

2V

100V

5V

1000

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

0.1MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BDV65BG vs BDV64BG
BDV64A

Central Semiconductor Corp

-

-

-

Through Hole

TO-218-3

-

-

SILICON

-

Bulk

-

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-

125W

NOT SPECIFIED

-

NOT SPECIFIED

-

1

-

-

-

COLLECTOR

AMPLIFIER

PNP

-

12A

1000 @ 5A 4V

-

-

80V

-

-

-

-

-

-

Non-RoHS Compliant

-

Tin/Lead (Sn/Pb)

60MHz

Through Hole

8541.29.00.75

SINGLE

not_compliant

R-PSFM-T3

Not Qualified

150°C

DARLINGTON

PNP

12A

60MHz

-

-

-

-

-

-

BDV65BG vs BDV64A
BDV64A-S

Bourns Inc.

-

-

-

Through Hole

TO-218-3

-

3

-

-65°C~150°C TJ

Tube

1993

-

-

Obsolete

1 (Unlimited)

-

-

-

-

3.5W

-

-

-

-

1

PNP

Single

-

-

-

PNP - Darlington

80V

12A

1000 @ 5A 4V

2mA

2V @ 20mA, 5A

60V

2V

80V

5V

-

-

-

ROHS3 Compliant

-

-

-

Through Hole

-

-

-

-

-

-

-

-

12A

-

SOT-93

150°C

-65°C

BDV64

3.5W

60V

BDV65BG vs BDV64A-S