ON Semiconductor BDV64BG

Name: BDV64BG
Brand: ON Semiconductor
SKU: 2845851-BDV64BG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDV64BG

Manufacturer:: ON Semiconductor

Ventron No:: 2845851-BDV64BG

Description:: TRANS PNP DARL 100V 10A TO247

ECAD Model:

Datasheet:: BDV64BG

Specifications

ON Semiconductor BDV64BG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BDV64BG.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
125W
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
125W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
0.1MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BDV64BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.

BDV64BG Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz

BDV64BG Applications
There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BDV64BG More Descriptions

10 A, 100 V PNP Darlington Bipolar Power Transistor
Bipolar (Bjt) Single Transistor, Darlington, Pnp, -100 V, 125 W, -10 A, 1000 Rohs Compliant: Yes |Onsemi BDV64BG
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 10A 125000mW 3-Pin(3 Tab) TO-247 Tube
DARLINGTON TRANSISTOR, SOT-93; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 125W; DC Collector Current: -10A; DC Current Gain hFE: 1000hFE; Transistor C

Product Comparison

The three parts on the right have similar specifications to BDV64BG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

HTS Code

Terminal Position

Reach Compliance Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Polarity/Channel Type

Current - Collector (Ic) (Max)

Frequency - Transition

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Base Part Number

Power - Max

Voltage - Collector Emitter Breakdown (Max)

View Compare
BDV64BG

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Through Hole

TO-247-3

NO

3

SILICON

-65°C~150°C TJ

Tube

2002

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-100V

125W

260

-10A

40

3

1

PNP

Single

125W

COLLECTOR

AMPLIFIER

PNP - Darlington

100V

10A

1000 @ 5A 4V

1mA

2V @ 20mA, 5A

100V

0.1MHz

2V

100V

5V

1000

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDV65B

Central Semiconductor Corp

-

-

Through Hole

TO-218-3

-

-

SILICON

-

Bulk

-

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-

125W

NOT SPECIFIED

-

NOT SPECIFIED

-

1

-

-

-

COLLECTOR

AMPLIFIER

NPN

-

12A

1000 @ 5A 4V

-

-

100V

60MHz

-

-

-

-

-

-

Non-RoHS Compliant

-

Through Hole

8541.29.00.75

SINGLE

not_compliant

R-PSFM-T3

Not Qualified

150°C

DARLINGTON

NPN

12A

60MHz

-

-

-

-

-

-

BDV64BG vs BDV65B
BDV64

Central Semiconductor Corp

-

-

Through Hole

TO-218-3

-

-

SILICON

-

Bulk

-

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

-

125W

NOT SPECIFIED

-

NOT SPECIFIED

-

1

-

-

-

COLLECTOR

AMPLIFIER

PNP

-

12A

1000 @ 5A 4V

-

-

60V

60MHz

-

-

-

-

-

-

Non-RoHS Compliant

-

Through Hole

8541.29.00.75

SINGLE

not_compliant

R-PSFM-T3

Not Qualified

150°C

DARLINGTON

PNP

12A

60MHz

-

-

-

-

-

-

BDV64BG vs BDV64
BDV64A-S

Bourns Inc.

-

-

Through Hole

TO-218-3

-

3

-

-65°C~150°C TJ

Tube

1993

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

3.5W

-

-

-

-

1

PNP

Single

-

-

-

PNP - Darlington

80V

12A

1000 @ 5A 4V

2mA

2V @ 20mA, 5A

60V

-

2V

80V

5V

-

-

-

ROHS3 Compliant

-

Through Hole

-

-

-

-

-

-

-

-

12A

-

SOT-93

150°C

-65°C

BDV64

3.5W

60V

BDV64BG vs BDV64A-S