ON Semiconductor BD678

Name: BD678
Brand: ON Semiconductor
SKU: 2472344-BD678
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD678

Manufacturer:: ON Semiconductor

Ventron No:: 2472344-BD678

Description:: TRANS PNP DARL 60V 4A TO225

ECAD Model:

Datasheet:: BD678

Specifications

ON Semiconductor BD678 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD678.

Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Transistor Type:
PNP - Darlington
Supplier Device Package:
TO-225AA
Series:
-
Power - Max:
40W
Packaging:
Bulk
Package / Case:
TO-225AA, TO-126-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Current - Collector Cutoff (Max):
500µA
Current - Collector (Ic) (Max):
4A

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy BD678.

BD678 More Descriptions

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 60 V 4 A Complementary Darlington Transistor - SOT-32
DARLINGTON TRANSISTOR, TO-126; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:40W; DC Collector Current:4A; DC Current Gain hFE:750; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:4A; Collector Emitter Voltage Vces:-2.5V; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:1.5A; Device Marking:BD678; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:60V

Product Comparison

The three parts on the right have similar specifications to BD678.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Published

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Halogen Free

View Compare
BD678

ON Semiconductor

60V

2.5V @ 30mA, 1.5A

PNP - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

-

-

-

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-

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-

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-

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-

-

-

-

-

-

-

-

-

BD678 vs BD679
BD677A

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

60V

40W

4A

BD677

3

1

NPN

Single

40W

ISOLATED

SWITCHING

NPN - Darlington

60V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

60V

10MHz

2.8V

60V

5V

750

4A

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

BD678 vs BD677A
BD675G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 week ago)

14 Weeks

-

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

40W

4A

BD675

3

1

NPN

Single

40W

-

AMPLIFIER

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

1MHz

2.5V

45V

5V

750

-

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

NO

2005

yes

Tin (Sn)

260

40

Halogen Free

BD678 vs BD675G