STMicroelectronics BD677A

Name: BD677A
Brand: STMicroelectronics
SKU: 3068773-BD677A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD677A

Manufacturer:: STMicroelectronics

Ventron No:: 3068773-BD677A

Description:: TRANS NPN DARL 60V 4A SOT-32

ECAD Model:

Datasheet:: BD677A

Specifications

STMicroelectronics BD677A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD677A.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD677
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Height
10.8mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD677A Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.8V @ 40mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD677A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz

BD677A Applications
There are a lot of STMicroelectronics
BD677A applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD677A More Descriptions

Bipolar Junction Transistor, Darlington, NPN Type, TO-126
BD6xxx Series 60 V 4 A NPN Complementary Power Darlington Transistor - SOT-32
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3 Tab) SOT-32 Tube / TRANS NPN DARL 60V 4A SOT-32
BIPOLAR TRANSISTOR, DARLI.; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 750hFE; Transistor Case Style

Product Comparison

The three parts on the right have similar specifications to BD677A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Surface Mount

Published

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Halogen Free

View Compare
BD677A

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

60V

40W

4A

BD677

3

1

NPN

Single

40W

ISOLATED

SWITCHING

NPN - Darlington

60V

4A

750 @ 2A 3V

500μA

2.8V @ 40mA, 2A

60V

10MHz

2.8V

60V

5V

750

4A

10.8mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD679

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

2.5V @ 30mA, 1.5A

NPN - Darlington

TO-225AA

-

40W

Bulk

TO-225AA, TO-126-3

-55°C ~ 150°C (TJ)

Through Hole

-

750 @ 1.5A, 3V

500µA

4A

-

-

-

-

-

-

-

BD677A vs BD679
BD675G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

14 Weeks

-

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

45V

40W

4A

BD675

3

1

NPN

Single

40W

-

AMPLIFIER

NPN - Darlington

45V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

45V

1MHz

2.5V

45V

5V

750

-

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

2005

yes

Tin (Sn)

260

40

Halogen Free

BD677A vs BD675G
BD678G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

5 Weeks

Tin

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

40W

-4A

BD678

3

1

PNP

Single

40W

-

AMPLIFIER

PNP - Darlington

60V

4A

750 @ 1.5A 3V

500μA

2.5V @ 30mA, 1.5A

60V

200MHz

2.5V

60V

5V

750

-

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

1995

yes

-

260

40

Halogen Free

BD677A vs BD678G